Spray pyrolysis synthesized Cu(In,Al)(S,Se)2 thin films solar cells

Muhammad Aamir Hassan; Mohammad Mujahid; Leow Shin Woei; Lydia Helena Wong

doi:10.1088/2053-1591/aab116

Spray pyrolysis synthesized Cu(In,Al)(S,Se)₂ thin films solar cells

Muhammad Aamir Hassan, Mohammad Mujahid, Leow Shin Woei, Lydia Helena Wong

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Cu(In,Al)(S,Se)₂ thin films are prepared by the Spray pyrolysis of aqueous precursor solutions of copper, indium, aluminium and sulphur sources. The bandgap of the films was engineered by aluminium (Al) doping in CISSe films deposited on molybdenum (Mo) coated glass substrate. The as-sprayed thin films were selenized at 500 °C for 10 min. Cadmium sulphide (CdS) buffer layer was deposited by chemical bath deposition process. Solar cell devices were fabricated with configuration of glass/Mo/CIASSe/CdS/i-ZnO/AZO. The solar cell device containing thin film of Cu(In,Al)(S,Se)₂ with our optimized composition shows j-V characteristics of V_oc = 0.47 V, j_sc = 21.19 mA cm^-2, FF = 52.88% and power conversion efficiency of 5.27%, under AM 1.5, 100 mW cm^-2 illumination.

Original language	English
Article number	035506
Journal	Materials Research Express
Volume	5
Issue number	3
DOIs	https://doi.org/10.1088/2053-1591/aab116
Publication status	Published - Mar 2018
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2018 IOP Publishing Ltd.

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Biomaterials
Surfaces, Coatings and Films
Polymers and Plastics
Metals and Alloys

Keywords

chalcopyrite
solar cell
spray pyrolysis
thin films

Access to Document

10.1088/2053-1591/aab116

Cite this

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title = "Spray pyrolysis synthesized Cu(In,Al)(S,Se)2 thin films solar cells",

abstract = "Cu(In,Al)(S,Se)2 thin films are prepared by the Spray pyrolysis of aqueous precursor solutions of copper, indium, aluminium and sulphur sources. The bandgap of the films was engineered by aluminium (Al) doping in CISSe films deposited on molybdenum (Mo) coated glass substrate. The as-sprayed thin films were selenized at 500 °C for 10 min. Cadmium sulphide (CdS) buffer layer was deposited by chemical bath deposition process. Solar cell devices were fabricated with configuration of glass/Mo/CIASSe/CdS/i-ZnO/AZO. The solar cell device containing thin film of Cu(In,Al)(S,Se)2 with our optimized composition shows j-V characteristics of Voc = 0.47 V, jsc = 21.19 mA cm-2, FF = 52.88% and power conversion efficiency of 5.27%, under AM 1.5, 100 mW cm-2 illumination.",

keywords = "chalcopyrite, solar cell, spray pyrolysis, thin films",

author = "Hassan, {Muhammad Aamir} and Mohammad Mujahid and Woei, {Leow Shin} and Wong, {Lydia Helena}",

note = "Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd.",

year = "2018",

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AU - Hassan, Muhammad Aamir

AU - Mujahid, Mohammad

AU - Woei, Leow Shin

AU - Wong, Lydia Helena

PY - 2018/3

Y1 - 2018/3

N2 - Cu(In,Al)(S,Se)2 thin films are prepared by the Spray pyrolysis of aqueous precursor solutions of copper, indium, aluminium and sulphur sources. The bandgap of the films was engineered by aluminium (Al) doping in CISSe films deposited on molybdenum (Mo) coated glass substrate. The as-sprayed thin films were selenized at 500 °C for 10 min. Cadmium sulphide (CdS) buffer layer was deposited by chemical bath deposition process. Solar cell devices were fabricated with configuration of glass/Mo/CIASSe/CdS/i-ZnO/AZO. The solar cell device containing thin film of Cu(In,Al)(S,Se)2 with our optimized composition shows j-V characteristics of Voc = 0.47 V, jsc = 21.19 mA cm-2, FF = 52.88% and power conversion efficiency of 5.27%, under AM 1.5, 100 mW cm-2 illumination.

AB - Cu(In,Al)(S,Se)2 thin films are prepared by the Spray pyrolysis of aqueous precursor solutions of copper, indium, aluminium and sulphur sources. The bandgap of the films was engineered by aluminium (Al) doping in CISSe films deposited on molybdenum (Mo) coated glass substrate. The as-sprayed thin films were selenized at 500 °C for 10 min. Cadmium sulphide (CdS) buffer layer was deposited by chemical bath deposition process. Solar cell devices were fabricated with configuration of glass/Mo/CIASSe/CdS/i-ZnO/AZO. The solar cell device containing thin film of Cu(In,Al)(S,Se)2 with our optimized composition shows j-V characteristics of Voc = 0.47 V, jsc = 21.19 mA cm-2, FF = 52.88% and power conversion efficiency of 5.27%, under AM 1.5, 100 mW cm-2 illumination.

KW - chalcopyrite

KW - solar cell

KW - spray pyrolysis

KW - thin films

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