Steady-state and transient photocurrents in rubrene single crystal free-space dielectric transistors

N. Mathews; D. Fichou; E. Menard; V. Podzorov; S. G. Mhaisalkar

doi:10.1063/1.2807838

Steady-state and transient photocurrents in rubrene single crystal free-space dielectric transistors

N. Mathews^*, D. Fichou, E. Menard, V. Podzorov, S. G. Mhaisalkar

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

We report results of photocurrent studies performed on rubrene single crystal transistors in the air-gap configuration under 405 nm irradiation. The phototransistors show a strong photoresponse indicative of photoconduction. Under illumination, the phototransistors show an average threshold voltage shift of 22 V and a maximum photosensistivity of 2.65× 103. A small persistent photoconductivity effect is observed in the transistors tested under continuous illumination which is explained by delayed recombination aided by spatial separation of the photocarriers. Photocurrent transients measured by applying short pulses on the other hand show a complete recovery in the microsecond regime implying immediate recombination.

Original language	English
Article number	212108
Journal	Applied Physics Letters
Volume	91
Issue number	21
DOIs	https://doi.org/10.1063/1.2807838
Publication status	Published - 2007
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2807838

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@article{1b9be67acf264a1e9b1c50eb3898fed7,

title = "Steady-state and transient photocurrents in rubrene single crystal free-space dielectric transistors",

abstract = "We report results of photocurrent studies performed on rubrene single crystal transistors in the air-gap configuration under 405 nm irradiation. The phototransistors show a strong photoresponse indicative of photoconduction. Under illumination, the phototransistors show an average threshold voltage shift of 22 V and a maximum photosensistivity of 2.65× 103. A small persistent photoconductivity effect is observed in the transistors tested under continuous illumination which is explained by delayed recombination aided by spatial separation of the photocarriers. Photocurrent transients measured by applying short pulses on the other hand show a complete recovery in the microsecond regime implying immediate recombination.",

author = "N. Mathews and D. Fichou and E. Menard and V. Podzorov and Mhaisalkar, {S. G.}",

year = "2007",

doi = "10.1063/1.2807838",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "21",

}

TY - JOUR

T1 - Steady-state and transient photocurrents in rubrene single crystal free-space dielectric transistors

AU - Mathews, N.

AU - Fichou, D.

AU - Menard, E.

AU - Podzorov, V.

AU - Mhaisalkar, S. G.

PY - 2007

Y1 - 2007

N2 - We report results of photocurrent studies performed on rubrene single crystal transistors in the air-gap configuration under 405 nm irradiation. The phototransistors show a strong photoresponse indicative of photoconduction. Under illumination, the phototransistors show an average threshold voltage shift of 22 V and a maximum photosensistivity of 2.65× 103. A small persistent photoconductivity effect is observed in the transistors tested under continuous illumination which is explained by delayed recombination aided by spatial separation of the photocarriers. Photocurrent transients measured by applying short pulses on the other hand show a complete recovery in the microsecond regime implying immediate recombination.

AB - We report results of photocurrent studies performed on rubrene single crystal transistors in the air-gap configuration under 405 nm irradiation. The phototransistors show a strong photoresponse indicative of photoconduction. Under illumination, the phototransistors show an average threshold voltage shift of 22 V and a maximum photosensistivity of 2.65× 103. A small persistent photoconductivity effect is observed in the transistors tested under continuous illumination which is explained by delayed recombination aided by spatial separation of the photocarriers. Photocurrent transients measured by applying short pulses on the other hand show a complete recovery in the microsecond regime implying immediate recombination.

UR - http://www.scopus.com/inward/record.url?scp=36348982113&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36348982113&partnerID=8YFLogxK

U2 - 10.1063/1.2807838

DO - 10.1063/1.2807838

M3 - Article

AN - SCOPUS:36348982113

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212108

ER -

Steady-state and transient photocurrents in rubrene single crystal free-space dielectric transistors

Abstract

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