Structural and optical properties of ZnO thin films produced by filtered cathodic vacuum arc

X. L. Xu; S. P. Lau; B. K. Tay

doi:10.1016/S0040-6090(01)01452-3

Structural and optical properties of ZnO thin films produced by filtered cathodic vacuum arc

X. L. Xu, S. P. Lau^*, B. K. Tay

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Conference article › peer-review

59 Citations (Scopus)

Abstract

Polycrystalline ZnO films have been deposited by filtered cathodic vacuum arc with various substrate temperatures and bias voltages. The films deposited at room temperature are amorphous. The films grown at 230 and 430°C oriented in the (002) and (103) directions. Strong near-band edge room temperature photoluminescence emission has been observed in the film deposited at 230°C under floating bias. This is attributed to the reduced oxygen vacancies as determined by Raman spectroscopy. The bias voltage and high substrate temperature (up to 430°C) will induce more defects, resulting in broad band tails near the band edge. The optimized ZnO film has a transmittance which is over 80%.

Original language	English
Pages (from-to)	244-249
Number of pages	6
Journal	Thin Solid Films
Volume	398-399
DOIs	https://doi.org/10.1016/S0040-6090(01)01452-3
Publication status	Published - Nov 2001
Externally published	Yes
Event	28th International Conference on Metallurgia - San Diego,CA, United States Duration: Apr 30 2001 → May 30 2001

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Keywords

Filtered cathodic vacuum arc
X-Ray diffraction
Zinc oxide

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10.1016/S0040-6090(01)01452-3

Cite this

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title = "Structural and optical properties of ZnO thin films produced by filtered cathodic vacuum arc",

abstract = "Polycrystalline ZnO films have been deposited by filtered cathodic vacuum arc with various substrate temperatures and bias voltages. The films deposited at room temperature are amorphous. The films grown at 230 and 430°C oriented in the (002) and (103) directions. Strong near-band edge room temperature photoluminescence emission has been observed in the film deposited at 230°C under floating bias. This is attributed to the reduced oxygen vacancies as determined by Raman spectroscopy. The bias voltage and high substrate temperature (up to 430°C) will induce more defects, resulting in broad band tails near the band edge. The optimized ZnO film has a transmittance which is over 80%.",

keywords = "Filtered cathodic vacuum arc, X-Ray diffraction, Zinc oxide",

author = "Xu, {X. L.} and Lau, {S. P.} and Tay, {B. K.}",

year = "2001",

month = nov,

doi = "10.1016/S0040-6090(01)01452-3",

language = "English",

volume = "398-399",

pages = "244--249",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

note = "28th International Conference on Metallurgia ; Conference date: 30-04-2001 Through 30-05-2001",

}

TY - JOUR

T1 - Structural and optical properties of ZnO thin films produced by filtered cathodic vacuum arc

AU - Xu, X. L.

AU - Lau, S. P.

AU - Tay, B. K.

PY - 2001/11

Y1 - 2001/11

N2 - Polycrystalline ZnO films have been deposited by filtered cathodic vacuum arc with various substrate temperatures and bias voltages. The films deposited at room temperature are amorphous. The films grown at 230 and 430°C oriented in the (002) and (103) directions. Strong near-band edge room temperature photoluminescence emission has been observed in the film deposited at 230°C under floating bias. This is attributed to the reduced oxygen vacancies as determined by Raman spectroscopy. The bias voltage and high substrate temperature (up to 430°C) will induce more defects, resulting in broad band tails near the band edge. The optimized ZnO film has a transmittance which is over 80%.

AB - Polycrystalline ZnO films have been deposited by filtered cathodic vacuum arc with various substrate temperatures and bias voltages. The films deposited at room temperature are amorphous. The films grown at 230 and 430°C oriented in the (002) and (103) directions. Strong near-band edge room temperature photoluminescence emission has been observed in the film deposited at 230°C under floating bias. This is attributed to the reduced oxygen vacancies as determined by Raman spectroscopy. The bias voltage and high substrate temperature (up to 430°C) will induce more defects, resulting in broad band tails near the band edge. The optimized ZnO film has a transmittance which is over 80%.

KW - Filtered cathodic vacuum arc

KW - X-Ray diffraction

KW - Zinc oxide

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UR - http://www.scopus.com/inward/citedby.url?scp=0035505779&partnerID=8YFLogxK

U2 - 10.1016/S0040-6090(01)01452-3

DO - 10.1016/S0040-6090(01)01452-3

M3 - Conference article

AN - SCOPUS:0035505779

SN - 0040-6090

VL - 398-399

SP - 244

EP - 249

JO - Thin Solid Films

JF - Thin Solid Films

T2 - 28th International Conference on Metallurgia

Y2 - 30 April 2001 through 30 May 2001

ER -

Structural and optical properties of ZnO thin films produced by filtered cathodic vacuum arc

Abstract

ASJC Scopus Subject Areas

Keywords

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