Structural, electrical and mechanical properties of templated silsesquioxane porous films

Suzhu Yu; Terence K.S. Wong; Xiao Hu; Jun Wei; Ming Shyan Yong

doi:10.1016/j.mee.2004.09.008

Structural, electrical and mechanical properties of templated silsesquioxane porous films

Suzhu Yu^*, Terence K.S. Wong, Xiao Hu, Jun Wei, Ming Shyan Yong

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Porous dielectric films were successfully synthesized by incorporating poly(amidoamine) (PAMAM) template to silsesquioxane host polymer. The structural, electrical and mechanical properties of the films could be tuned with PAMAM concentration. The porosity of the films increased while the dielectric constant of the films decreased with PAMAM fraction. Films with ultra-low dielectric constant about 2.06 could be obtained with leakage current density on the order of 10^-7 A/cm² at 1 MV/cm. The conduction mechanism was analyzed and showed that the carries in the films followed Schottky mechanism. The mechanical properties of the films were determined with nanoindentation. Both elastic modulus and hardness decreased with PAMAM concentration, suggesting that the incorporation of the porosity to the films compromised their mechanical properties.

Original language	English
Pages (from-to)	125-131
Number of pages	7
Journal	Microelectronic Engineering
Volume	77
Issue number	2
DOIs	https://doi.org/10.1016/j.mee.2004.09.008
Publication status	Published - Feb 2005
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Keywords

Conduction mechanism
Low-k films
Nanoindentation
Porous materials

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10.1016/j.mee.2004.09.008

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title = "Structural, electrical and mechanical properties of templated silsesquioxane porous films",

abstract = "Porous dielectric films were successfully synthesized by incorporating poly(amidoamine) (PAMAM) template to silsesquioxane host polymer. The structural, electrical and mechanical properties of the films could be tuned with PAMAM concentration. The porosity of the films increased while the dielectric constant of the films decreased with PAMAM fraction. Films with ultra-low dielectric constant about 2.06 could be obtained with leakage current density on the order of 10-7 A/cm2 at 1 MV/cm. The conduction mechanism was analyzed and showed that the carries in the films followed Schottky mechanism. The mechanical properties of the films were determined with nanoindentation. Both elastic modulus and hardness decreased with PAMAM concentration, suggesting that the incorporation of the porosity to the films compromised their mechanical properties.",

keywords = "Conduction mechanism, Low-k films, Nanoindentation, Porous materials",

author = "Suzhu Yu and Wong, {Terence K.S.} and Xiao Hu and Jun Wei and Yong, {Ming Shyan}",

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doi = "10.1016/j.mee.2004.09.008",

language = "English",

volume = "77",

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journal = "Microelectronic Engineering",

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publisher = "Elsevier",

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TY - JOUR

T1 - Structural, electrical and mechanical properties of templated silsesquioxane porous films

AU - Yu, Suzhu

AU - Wong, Terence K.S.

AU - Hu, Xiao

AU - Wei, Jun

AU - Yong, Ming Shyan

PY - 2005/2

Y1 - 2005/2

N2 - Porous dielectric films were successfully synthesized by incorporating poly(amidoamine) (PAMAM) template to silsesquioxane host polymer. The structural, electrical and mechanical properties of the films could be tuned with PAMAM concentration. The porosity of the films increased while the dielectric constant of the films decreased with PAMAM fraction. Films with ultra-low dielectric constant about 2.06 could be obtained with leakage current density on the order of 10-7 A/cm2 at 1 MV/cm. The conduction mechanism was analyzed and showed that the carries in the films followed Schottky mechanism. The mechanical properties of the films were determined with nanoindentation. Both elastic modulus and hardness decreased with PAMAM concentration, suggesting that the incorporation of the porosity to the films compromised their mechanical properties.

AB - Porous dielectric films were successfully synthesized by incorporating poly(amidoamine) (PAMAM) template to silsesquioxane host polymer. The structural, electrical and mechanical properties of the films could be tuned with PAMAM concentration. The porosity of the films increased while the dielectric constant of the films decreased with PAMAM fraction. Films with ultra-low dielectric constant about 2.06 could be obtained with leakage current density on the order of 10-7 A/cm2 at 1 MV/cm. The conduction mechanism was analyzed and showed that the carries in the films followed Schottky mechanism. The mechanical properties of the films were determined with nanoindentation. Both elastic modulus and hardness decreased with PAMAM concentration, suggesting that the incorporation of the porosity to the films compromised their mechanical properties.

KW - Conduction mechanism

KW - Low-k films

KW - Nanoindentation

KW - Porous materials

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JO - Microelectronic Engineering

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IS - 2

ER -

Structural, electrical and mechanical properties of templated silsesquioxane porous films

Abstract

ASJC Scopus Subject Areas

Keywords

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