Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique

H. W. Lee; S. P. Lau; Y. G. Wang; K. Y. Tse; H. H. Hng; B. K. Tay

doi:10.1016/j.jcrysgro.2004.04.098

Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique

H. W. Lee, S. P. Lau^*, Y. G. Wang, K. Y. Tse, H. H. Hng, B. K. Tay

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Conference article › peer-review

165 Citations (Scopus)

Abstract

Highly conductive and transparent aluminum-doped zinc oxide (ZnO:Al) thin films have been prepared using the filtered cathodic vacuum arc technique at relatively low temperatures. The properties of ZnO:Al films under the influence of substrate temperature were investigated. It was found that the optical, electrical and structural properties of the films depended directly on substrate temperature during deposition. ZnO:Al films exhibited c-axis oriented crystal growth. The ZnO:Al films were prepared using Zn-Al alloy targets with various Al content. The lowest resistivity of 8×10^-4 Ωcm was obtained for the Al-doped (5 at%) film prepared at a substrate temperature of 150°C. The optical absorption edge was found to shift to the shorter wavelength with a reduction in substrate temperature, and it was found that doping with Al had the effect of broadening the optical band gap, with both cases being attributed to the Burstein-Moss shift.

Original language	English
Pages (from-to)	596-601
Number of pages	6
Journal	Journal of Crystal Growth
Volume	268
Issue number	3-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.04.098
Publication status	Published - Aug 1 2004
Externally published	Yes
Event	ICMAT 2003, Symposium H, Compound Semiconductors in Electronic - Singapore, Singapore Duration: Dec 7 2003 → Dec 12 2004

ASJC Scopus Subject Areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Keywords

A3. Filtered cathodic vacuum arc
B1. ZnO:Al
B2. Semiconducting II-VI materials

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10.1016/j.jcrysgro.2004.04.098

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title = "Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique",

abstract = "Highly conductive and transparent aluminum-doped zinc oxide (ZnO:Al) thin films have been prepared using the filtered cathodic vacuum arc technique at relatively low temperatures. The properties of ZnO:Al films under the influence of substrate temperature were investigated. It was found that the optical, electrical and structural properties of the films depended directly on substrate temperature during deposition. ZnO:Al films exhibited c-axis oriented crystal growth. The ZnO:Al films were prepared using Zn-Al alloy targets with various Al content. The lowest resistivity of 8×10-4 Ωcm was obtained for the Al-doped (5 at%) film prepared at a substrate temperature of 150°C. The optical absorption edge was found to shift to the shorter wavelength with a reduction in substrate temperature, and it was found that doping with Al had the effect of broadening the optical band gap, with both cases being attributed to the Burstein-Moss shift.",

keywords = "A3. Filtered cathodic vacuum arc, B1. ZnO:Al, B2. Semiconducting II-VI materials",

author = "Lee, {H. W.} and Lau, {S. P.} and Wang, {Y. G.} and Tse, {K. Y.} and Hng, {H. H.} and Tay, {B. K.}",

year = "2004",

month = aug,

day = "1",

doi = "10.1016/j.jcrysgro.2004.04.098",

language = "English",

volume = "268",

pages = "596--601",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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T1 - Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique

AU - Lee, H. W.

AU - Lau, S. P.

AU - Wang, Y. G.

AU - Tse, K. Y.

AU - Hng, H. H.

AU - Tay, B. K.

PY - 2004/8/1

Y1 - 2004/8/1

N2 - Highly conductive and transparent aluminum-doped zinc oxide (ZnO:Al) thin films have been prepared using the filtered cathodic vacuum arc technique at relatively low temperatures. The properties of ZnO:Al films under the influence of substrate temperature were investigated. It was found that the optical, electrical and structural properties of the films depended directly on substrate temperature during deposition. ZnO:Al films exhibited c-axis oriented crystal growth. The ZnO:Al films were prepared using Zn-Al alloy targets with various Al content. The lowest resistivity of 8×10-4 Ωcm was obtained for the Al-doped (5 at%) film prepared at a substrate temperature of 150°C. The optical absorption edge was found to shift to the shorter wavelength with a reduction in substrate temperature, and it was found that doping with Al had the effect of broadening the optical band gap, with both cases being attributed to the Burstein-Moss shift.

AB - Highly conductive and transparent aluminum-doped zinc oxide (ZnO:Al) thin films have been prepared using the filtered cathodic vacuum arc technique at relatively low temperatures. The properties of ZnO:Al films under the influence of substrate temperature were investigated. It was found that the optical, electrical and structural properties of the films depended directly on substrate temperature during deposition. ZnO:Al films exhibited c-axis oriented crystal growth. The ZnO:Al films were prepared using Zn-Al alloy targets with various Al content. The lowest resistivity of 8×10-4 Ωcm was obtained for the Al-doped (5 at%) film prepared at a substrate temperature of 150°C. The optical absorption edge was found to shift to the shorter wavelength with a reduction in substrate temperature, and it was found that doping with Al had the effect of broadening the optical band gap, with both cases being attributed to the Burstein-Moss shift.

KW - A3. Filtered cathodic vacuum arc

KW - B1. ZnO:Al

KW - B2. Semiconducting II-VI materials

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DO - 10.1016/j.jcrysgro.2004.04.098

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SN - 0022-0248

VL - 268

SP - 596

EP - 601

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4 SPEC. ISS.

T2 - ICMAT 2003, Symposium H, Compound Semiconductors in Electronic

Y2 - 7 December 2003 through 12 December 2004

ER -

Structural, electrical and optical properties of Al-doped ZnO thin films prepared by filtered cathodic vacuum arc technique

Abstract

ASJC Scopus Subject Areas

Keywords

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