Structural, electrical and optical properties of sol-gel processed thin films of BaTiO3 on ITO glass

C. H. Kam; S. D. Cheng; Y. Zhou; K. Pita; X. Q. Han; W. X. Que; H. X. Zhang; Y. L. Lam; Y. C. Chan; W. S. Gan; Z. Sun; X. Shi

doi:10.1117/12.370349

Structural, electrical and optical properties of sol-gel processed thin films of BaTiO₃ on ITO glass

C. H. Kam^*, S. D. Cheng, Y. Zhou, K. Pita, X. Q. Han, W. X. Que, H. X. Zhang, Y. L. Lam, Y. C. Chan, W. S. Gan, Z. Sun, X. Shi

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

BaTiO₃ thin films are prepared on ITO-coated Corning 1737 glass. The solution is prepared from a double metal ethoxide and the films are deposited by spin coating and annealing at 700°C for 2 hours in an O₂ atmosphere. The films are characterized using X-ray diffraction, atomic force microscopy, micro-Raman, UV-VIS spectroscopy, and Sawyer-Tower Bridge. The pure perovskite phase of BaTiO₃ is identified by X-ray diffraction. The tetragonality is revealed from Raman study by identifying the symmetrical dependent Raman shift at about 306 cm^-1. The ferroelectricity of the film is confirmed by the P-E hysterisis loop. The films are highly transparent, with an absorption edge at 3.73eV. These desirable features indicate that the films have potential in electronic display and electro-optical applications.

Original language	English
Pages (from-to)	466-471
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3896
DOIs	https://doi.org/10.1117/12.370349
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices - Singapore, Singapore Duration: Nov 30 1999 → Dec 3 1999

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.370349

Cite this

Kam, C. H., Cheng, S. D., Zhou, Y., Pita, K., Han, X. Q., Que, W. X., Zhang, H. X., Lam, Y. L., Chan, Y. C., Gan, W. S., Sun, Z., & Shi, X. (1999). Structural, electrical and optical properties of sol-gel processed thin films of BaTiO₃ on ITO glass. Proceedings of SPIE - The International Society for Optical Engineering, 3896, 466-471. https://doi.org/10.1117/12.370349

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title = "Structural, electrical and optical properties of sol-gel processed thin films of BaTiO3 on ITO glass",

abstract = "BaTiO3 thin films are prepared on ITO-coated Corning 1737 glass. The solution is prepared from a double metal ethoxide and the films are deposited by spin coating and annealing at 700°C for 2 hours in an O2 atmosphere. The films are characterized using X-ray diffraction, atomic force microscopy, micro-Raman, UV-VIS spectroscopy, and Sawyer-Tower Bridge. The pure perovskite phase of BaTiO3 is identified by X-ray diffraction. The tetragonality is revealed from Raman study by identifying the symmetrical dependent Raman shift at about 306 cm-1. The ferroelectricity of the film is confirmed by the P-E hysterisis loop. The films are highly transparent, with an absorption edge at 3.73eV. These desirable features indicate that the films have potential in electronic display and electro-optical applications.",

author = "Kam, {C. H.} and Cheng, {S. D.} and Y. Zhou and K. Pita and Han, {X. Q.} and Que, {W. X.} and Zhang, {H. X.} and Lam, {Y. L.} and Chan, {Y. C.} and Gan, {W. S.} and Z. Sun and X. Shi",

year = "1999",

doi = "10.1117/12.370349",

language = "English",

volume = "3896",

pages = "466--471",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices ; Conference date: 30-11-1999 Through 03-12-1999",

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TY - JOUR

T1 - Structural, electrical and optical properties of sol-gel processed thin films of BaTiO3 on ITO glass

AU - Kam, C. H.

AU - Cheng, S. D.

AU - Zhou, Y.

AU - Pita, K.

AU - Han, X. Q.

AU - Que, W. X.

AU - Zhang, H. X.

AU - Lam, Y. L.

AU - Chan, Y. C.

AU - Gan, W. S.

AU - Sun, Z.

AU - Shi, X.

PY - 1999

Y1 - 1999

N2 - BaTiO3 thin films are prepared on ITO-coated Corning 1737 glass. The solution is prepared from a double metal ethoxide and the films are deposited by spin coating and annealing at 700°C for 2 hours in an O2 atmosphere. The films are characterized using X-ray diffraction, atomic force microscopy, micro-Raman, UV-VIS spectroscopy, and Sawyer-Tower Bridge. The pure perovskite phase of BaTiO3 is identified by X-ray diffraction. The tetragonality is revealed from Raman study by identifying the symmetrical dependent Raman shift at about 306 cm-1. The ferroelectricity of the film is confirmed by the P-E hysterisis loop. The films are highly transparent, with an absorption edge at 3.73eV. These desirable features indicate that the films have potential in electronic display and electro-optical applications.

AB - BaTiO3 thin films are prepared on ITO-coated Corning 1737 glass. The solution is prepared from a double metal ethoxide and the films are deposited by spin coating and annealing at 700°C for 2 hours in an O2 atmosphere. The films are characterized using X-ray diffraction, atomic force microscopy, micro-Raman, UV-VIS spectroscopy, and Sawyer-Tower Bridge. The pure perovskite phase of BaTiO3 is identified by X-ray diffraction. The tetragonality is revealed from Raman study by identifying the symmetrical dependent Raman shift at about 306 cm-1. The ferroelectricity of the film is confirmed by the P-E hysterisis loop. The films are highly transparent, with an absorption edge at 3.73eV. These desirable features indicate that the films have potential in electronic display and electro-optical applications.

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SN - 0277-786X

VL - 3896

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EP - 471

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1999 Design, Fabrication, and Characterization of Photonic Devices

Y2 - 30 November 1999 through 3 December 1999