Study of Alq3 thermal evaporation rate effects on the OLED

C. B. Lee; A. Uddin; X. Hu; T. G. Andersson

doi:10.1016/j.mseb.2004.05.009

Study of Alq₃ thermal evaporation rate effects on the OLED

C. B. Lee, A. Uddin^*, X. Hu, T. G. Andersson

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

50 Citations (Scopus)

Abstract

Electrical and optical characteristic, surface morphology and nitrogen/carbon ratio of tris-(8-hydroxyquinoline) aluminum (Alq₃) were studied as a function of thermal evaporation rate. When the deposition rate increased from 0.3 to 1.5 Å/s, the luminescence efficiency of OLED increased about three times. The X-ray photoelectron spectroscopy (XPS) measurements showed that as the Alq₃ deposition rate increased, the film had less N-containing species. AFM measurements showed that the surface roughness of the Alq₃ films decreased from 4.4 to 1.0 nm with deposition rates. These changed Alq₃ film composition and surface morphology are believed to have effects on the electrical and luminance performance.

Original language	English
Pages (from-to)	14-18
Number of pages	5
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	112
Issue number	1
DOIs	https://doi.org/10.1016/j.mseb.2004.05.009
Publication status	Published - Sept 15 2004
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

Alq
Deposition rate
OLED
Thermal evaporation

Access to Document

10.1016/j.mseb.2004.05.009

Cite this

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title = "Study of Alq3 thermal evaporation rate effects on the OLED",

abstract = "Electrical and optical characteristic, surface morphology and nitrogen/carbon ratio of tris-(8-hydroxyquinoline) aluminum (Alq3) were studied as a function of thermal evaporation rate. When the deposition rate increased from 0.3 to 1.5 {\AA}/s, the luminescence efficiency of OLED increased about three times. The X-ray photoelectron spectroscopy (XPS) measurements showed that as the Alq3 deposition rate increased, the film had less N-containing species. AFM measurements showed that the surface roughness of the Alq3 films decreased from 4.4 to 1.0 nm with deposition rates. These changed Alq3 film composition and surface morphology are believed to have effects on the electrical and luminance performance.",

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AU - Lee, C. B.

AU - Uddin, A.

AU - Hu, X.

AU - Andersson, T. G.

PY - 2004/9/15

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N2 - Electrical and optical characteristic, surface morphology and nitrogen/carbon ratio of tris-(8-hydroxyquinoline) aluminum (Alq3) were studied as a function of thermal evaporation rate. When the deposition rate increased from 0.3 to 1.5 Å/s, the luminescence efficiency of OLED increased about three times. The X-ray photoelectron spectroscopy (XPS) measurements showed that as the Alq3 deposition rate increased, the film had less N-containing species. AFM measurements showed that the surface roughness of the Alq3 films decreased from 4.4 to 1.0 nm with deposition rates. These changed Alq3 film composition and surface morphology are believed to have effects on the electrical and luminance performance.

AB - Electrical and optical characteristic, surface morphology and nitrogen/carbon ratio of tris-(8-hydroxyquinoline) aluminum (Alq3) were studied as a function of thermal evaporation rate. When the deposition rate increased from 0.3 to 1.5 Å/s, the luminescence efficiency of OLED increased about three times. The X-ray photoelectron spectroscopy (XPS) measurements showed that as the Alq3 deposition rate increased, the film had less N-containing species. AFM measurements showed that the surface roughness of the Alq3 films decreased from 4.4 to 1.0 nm with deposition rates. These changed Alq3 film composition and surface morphology are believed to have effects on the electrical and luminance performance.

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