Study of Multilevel High-Resistance States in HfO

H. K. Li; T. P. Chen; S. G. Hu; P. Liu; Y. Liu; P. S. Lee; X. P. Wang; H. Y. Li; G. Q. Lo

doi:10.1109/TED.2015.2445339

Study of Multilevel High-Resistance States in HfO

H. K. Li, T. P. Chen, S. G. Hu, P. Liu, Y. Liu, P. S. Lee, X. P. Wang, H. Y. Li, G. Q. Lo

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Multilevel high-resistance states are achieved in TiN/HfO_x/Pt resistive switching random access memory device by controlling the reset stop voltage. Impedance spectroscopy is used to study the multilevel high-resistance states. It is shown that the high-resistance states can be described with an equivalent circuit consisting of the major components R_s , R , and C corresponding to the series resistance of the TiON interfacial layer, the equivalent parallel resistance, and capacitance of the leakage gap between the TiON layer and the residual conductive filament, respectively. These components show a strong dependence on the stop voltage, which can be explained in the framework of oxygen vacancy model and conductive filament concept. On the other hand, R is observed to decrease with dc bias, which can be attributed to the barrier lowering effect of the Coulombic trap well in the Poole-Frenkel emission model.

Original language	English
Article number	7151817
Pages (from-to)	2684-2688
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	8
DOIs	https://doi.org/10.1109/TED.2015.2445339
Publication status	Published - Aug 1 2015
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Impedance spectroscopy
multilevel high-resistance states
Resistive switching random access memory (RRAM).

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10.1109/TED.2015.2445339

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title = "Study of Multilevel High-Resistance States in HfO",

abstract = "Multilevel high-resistance states are achieved in TiN/HfOx/Pt resistive switching random access memory device by controlling the reset stop voltage. Impedance spectroscopy is used to study the multilevel high-resistance states. It is shown that the high-resistance states can be described with an equivalent circuit consisting of the major components Rs , R , and C corresponding to the series resistance of the TiON interfacial layer, the equivalent parallel resistance, and capacitance of the leakage gap between the TiON layer and the residual conductive filament, respectively. These components show a strong dependence on the stop voltage, which can be explained in the framework of oxygen vacancy model and conductive filament concept. On the other hand, R is observed to decrease with dc bias, which can be attributed to the barrier lowering effect of the Coulombic trap well in the Poole-Frenkel emission model.",

keywords = "Impedance spectroscopy, multilevel high-resistance states, Resistive switching random access memory (RRAM).",

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year = "2015",

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doi = "10.1109/TED.2015.2445339",

language = "English",

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T1 - Study of Multilevel High-Resistance States in HfO

AU - Li, H. K.

AU - Chen, T. P.

AU - Hu, S. G.

AU - Liu, P.

AU - Liu, Y.

AU - Lee, P. S.

AU - Wang, X. P.

AU - Li, H. Y.

AU - Lo, G. Q.

PY - 2015/8/1

Y1 - 2015/8/1

N2 - Multilevel high-resistance states are achieved in TiN/HfOx/Pt resistive switching random access memory device by controlling the reset stop voltage. Impedance spectroscopy is used to study the multilevel high-resistance states. It is shown that the high-resistance states can be described with an equivalent circuit consisting of the major components Rs , R , and C corresponding to the series resistance of the TiON interfacial layer, the equivalent parallel resistance, and capacitance of the leakage gap between the TiON layer and the residual conductive filament, respectively. These components show a strong dependence on the stop voltage, which can be explained in the framework of oxygen vacancy model and conductive filament concept. On the other hand, R is observed to decrease with dc bias, which can be attributed to the barrier lowering effect of the Coulombic trap well in the Poole-Frenkel emission model.

AB - Multilevel high-resistance states are achieved in TiN/HfOx/Pt resistive switching random access memory device by controlling the reset stop voltage. Impedance spectroscopy is used to study the multilevel high-resistance states. It is shown that the high-resistance states can be described with an equivalent circuit consisting of the major components Rs , R , and C corresponding to the series resistance of the TiON interfacial layer, the equivalent parallel resistance, and capacitance of the leakage gap between the TiON layer and the residual conductive filament, respectively. These components show a strong dependence on the stop voltage, which can be explained in the framework of oxygen vacancy model and conductive filament concept. On the other hand, R is observed to decrease with dc bias, which can be attributed to the barrier lowering effect of the Coulombic trap well in the Poole-Frenkel emission model.

KW - Impedance spectroscopy

KW - multilevel high-resistance states

KW - Resistive switching random access memory (RRAM).

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Study of Multilevel High-Resistance States in HfO

Abstract

Bibliographical note

ASJC Scopus Subject Areas

Keywords

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