Study of Ru barrier failure in the Cu/Ru/Si system

Martina Damayanti; T. Sritharan; S. G. Mhaisalkar; E. Phoon; L. Chan

doi:10.1557/jmr.2007.0310

Study of Ru barrier failure in the Cu/Ru/Si system

Martina Damayanti^*, T. Sritharan, S. G. Mhaisalkar, E. Phoon, L. Chan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

The reaction mechanisms and related microstructures in the Cu/Si, Ru/Si, and Cu/Ru/Si metallization system were studied experimentally. With the help of sheet resistance measurements, x-ray diffraction, field-emission scanning electron microscopy, secondary ion mass spectroscopy, and transmission electron microscopy, the metallization structure with Ru barrier layer was observed to fail completely at temperatures around 700 °C, regardless of the Ru thickness because of the formation of polycrystalline Ru₂Si₃ followed by Cu₃Si protrusions.

Original language	English
Pages (from-to)	2505-2511
Number of pages	7
Journal	Journal of Materials Research
Volume	22
Issue number	9
DOIs	https://doi.org/10.1557/jmr.2007.0310
Publication status	Published - Sept 2007
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1557/jmr.2007.0310

Cite this

@article{2e60a287ac9b458cadf5ea7519d041ba,

title = "Study of Ru barrier failure in the Cu/Ru/Si system",

abstract = "The reaction mechanisms and related microstructures in the Cu/Si, Ru/Si, and Cu/Ru/Si metallization system were studied experimentally. With the help of sheet resistance measurements, x-ray diffraction, field-emission scanning electron microscopy, secondary ion mass spectroscopy, and transmission electron microscopy, the metallization structure with Ru barrier layer was observed to fail completely at temperatures around 700 °C, regardless of the Ru thickness because of the formation of polycrystalline Ru2Si3 followed by Cu3Si protrusions.",

author = "Martina Damayanti and T. Sritharan and Mhaisalkar, {S. G.} and E. Phoon and L. Chan",

year = "2007",

month = sep,

doi = "10.1557/jmr.2007.0310",

language = "English",

volume = "22",

pages = "2505--2511",

journal = "Journal of Materials Research",

issn = "0884-2914",

publisher = "Materials Research Society",

number = "9",

}

TY - JOUR

T1 - Study of Ru barrier failure in the Cu/Ru/Si system

AU - Damayanti, Martina

AU - Sritharan, T.

AU - Mhaisalkar, S. G.

AU - Phoon, E.

AU - Chan, L.

PY - 2007/9

Y1 - 2007/9

N2 - The reaction mechanisms and related microstructures in the Cu/Si, Ru/Si, and Cu/Ru/Si metallization system were studied experimentally. With the help of sheet resistance measurements, x-ray diffraction, field-emission scanning electron microscopy, secondary ion mass spectroscopy, and transmission electron microscopy, the metallization structure with Ru barrier layer was observed to fail completely at temperatures around 700 °C, regardless of the Ru thickness because of the formation of polycrystalline Ru2Si3 followed by Cu3Si protrusions.

AB - The reaction mechanisms and related microstructures in the Cu/Si, Ru/Si, and Cu/Ru/Si metallization system were studied experimentally. With the help of sheet resistance measurements, x-ray diffraction, field-emission scanning electron microscopy, secondary ion mass spectroscopy, and transmission electron microscopy, the metallization structure with Ru barrier layer was observed to fail completely at temperatures around 700 °C, regardless of the Ru thickness because of the formation of polycrystalline Ru2Si3 followed by Cu3Si protrusions.

UR - http://www.scopus.com/inward/record.url?scp=34748816844&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34748816844&partnerID=8YFLogxK

U2 - 10.1557/jmr.2007.0310

DO - 10.1557/jmr.2007.0310

M3 - Article

AN - SCOPUS:34748816844

SN - 0884-2914

VL - 22

SP - 2505

EP - 2511

JO - Journal of Materials Research

JF - Journal of Materials Research

IS - 9

ER -

Study of Ru barrier failure in the Cu/Ru/Si system

Abstract

ASJC Scopus Subject Areas

Access to Document

Other files and links

Fingerprint

Cite this