TY - GEN
T1 - Study of the evolution of Cu-Cu bonding interface imperfection under direct current stressing for three dimensional integrated circuits
AU - Made, Riko I.
AU - Peng Lan, Lan
AU - Li, Hong Yu
AU - Gan, Chee Lip
AU - Tan, Chuan Seng
PY - 2011
Y1 - 2011
N2 - While the ultimate goal of Cu interconnection in 3D-IC is to have Cu as both the glue layer and interconnection line, there has been numerous demonstration of Cu-Cu bonding that shows the bonding interface is not always perfect. This work investigates the evolution of Cu-Cu bond interface under prolonged current stress by combining electrical current stressing and bond interface cross-sectional analysis. Voids at the bond interface were observed to be driven by electromigration to the adjoining interconnect line, leading to early failures of the line. This may have significant impact on the future of 3D-IC technology that utilizes Cu-Cu bonding, and it may be mitigated by inserting a barrier layer in between the bond interface and the interconnect line.
AB - While the ultimate goal of Cu interconnection in 3D-IC is to have Cu as both the glue layer and interconnection line, there has been numerous demonstration of Cu-Cu bonding that shows the bonding interface is not always perfect. This work investigates the evolution of Cu-Cu bond interface under prolonged current stress by combining electrical current stressing and bond interface cross-sectional analysis. Voids at the bond interface were observed to be driven by electromigration to the adjoining interconnect line, leading to early failures of the line. This may have significant impact on the future of 3D-IC technology that utilizes Cu-Cu bonding, and it may be mitigated by inserting a barrier layer in between the bond interface and the interconnect line.
UR - http://www.scopus.com/inward/record.url?scp=80052077322&partnerID=8YFLogxK
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U2 - 10.1109/IITC.2011.5940302
DO - 10.1109/IITC.2011.5940302
M3 - Conference contribution
AN - SCOPUS:80052077322
SN - 9781457705038
T3 - 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011
BT - 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011
T2 - 2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011
Y2 - 8 May 2011 through 12 May 2011
ER -