Surface chemical states on 3C-SiC/Si epilayers

A. T.S. Wee; Z. C. Feng; H. H. Hng; K. L. Tan; C. C. Tin; R. Hu; R. Coston

doi:10.1016/0169-4332(94)90041-8

Surface chemical states on 3C-SiC/Si epilayers

A. T.S. Wee^*, Z. C. Feng, H. H. Hng, K. L. Tan, C. C. Tin, R. Hu, R. Coston

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

A series of 3C-SiC/Si(100) films grown by chemical vapour deposition (CVD) with different growth times and hence film thicknesses, are studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS showed that the surfaces of the samples consist of Si oxides (SiO₂ and SiO₂ where x<2) and unreacted CH. Unreacted elemental Si is also present and its amount decreases with increasing growth time. This surface overlayer is further investigated by changing the photoelectron take-off angle and from chemical etching studies. Compositional variations of the SiC films are also studied using SIMS. The results are discussed in terms of the three-step CVD growth process, namely, etching, buffer layer formation, and single-crystal 3C-SiC growth.

Original language	English
Pages (from-to)	377-385
Number of pages	9
Journal	Applied Surface Science
Volume	81
Issue number	4
DOIs	https://doi.org/10.1016/0169-4332(94)90041-8
Publication status	Published - Dec 1 1994
Externally published	Yes

ASJC Scopus Subject Areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/0169-4332(94)90041-8

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title = "Surface chemical states on 3C-SiC/Si epilayers",

abstract = "A series of 3C-SiC/Si(100) films grown by chemical vapour deposition (CVD) with different growth times and hence film thicknesses, are studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS showed that the surfaces of the samples consist of Si oxides (SiO2 and SiO2 where x<2) and unreacted CH. Unreacted elemental Si is also present and its amount decreases with increasing growth time. This surface overlayer is further investigated by changing the photoelectron take-off angle and from chemical etching studies. Compositional variations of the SiC films are also studied using SIMS. The results are discussed in terms of the three-step CVD growth process, namely, etching, buffer layer formation, and single-crystal 3C-SiC growth.",

author = "Wee, {A. T.S.} and Feng, {Z. C.} and Hng, {H. H.} and Tan, {K. L.} and Tin, {C. C.} and R. Hu and R. Coston",

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T1 - Surface chemical states on 3C-SiC/Si epilayers

AU - Wee, A. T.S.

AU - Feng, Z. C.

AU - Hng, H. H.

AU - Tan, K. L.

AU - Tin, C. C.

AU - Hu, R.

AU - Coston, R.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - A series of 3C-SiC/Si(100) films grown by chemical vapour deposition (CVD) with different growth times and hence film thicknesses, are studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS showed that the surfaces of the samples consist of Si oxides (SiO2 and SiO2 where x<2) and unreacted CH. Unreacted elemental Si is also present and its amount decreases with increasing growth time. This surface overlayer is further investigated by changing the photoelectron take-off angle and from chemical etching studies. Compositional variations of the SiC films are also studied using SIMS. The results are discussed in terms of the three-step CVD growth process, namely, etching, buffer layer formation, and single-crystal 3C-SiC growth.

AB - A series of 3C-SiC/Si(100) films grown by chemical vapour deposition (CVD) with different growth times and hence film thicknesses, are studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS showed that the surfaces of the samples consist of Si oxides (SiO2 and SiO2 where x<2) and unreacted CH. Unreacted elemental Si is also present and its amount decreases with increasing growth time. This surface overlayer is further investigated by changing the photoelectron take-off angle and from chemical etching studies. Compositional variations of the SiC films are also studied using SIMS. The results are discussed in terms of the three-step CVD growth process, namely, etching, buffer layer formation, and single-crystal 3C-SiC growth.

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JF - Applied Surface Science

IS - 4

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Surface chemical states on 3C-SiC/Si epilayers

Abstract

ASJC Scopus Subject Areas

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