Surface modified silica mesoporous films as a low dielectric constant intermetal dielectric

Suzhu Yu*, Terence K.S. Wong, Kantisara Pita, Xiao Hu, Valeri Ligatchev

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

Silica mesoporous films with low dielectric constant were successfully fabricated by a multiple-step sol-gel process. Various surface modifications were conducted to make the surface of the films hydrophobicity, which was proved very effective to maintain the low dielectric properties of the films. The basic properties of the silica films were evaluated by atomic force microscopy, specular x-ray reflectivity, Fourier transform infrared, and thermal gravimetric and differential thermal analysis. An inherent low dielectric constant of around 2.0 was realized for about 56% porosity of the silica film with pore size less than 40 nm and the leakage current was at a level of 10 -6A/cm 2 after two months of fabrication. Preliminary results of the silica films prepared here present a very positive prospective to intermetal dielectric applications.

Original languageEnglish
Pages (from-to)3338-3344
Number of pages7
JournalJournal of Applied Physics
Volume92
Issue number6
DOIs
Publication statusPublished - Sept 15 2002
Externally publishedYes

ASJC Scopus Subject Areas

  • General Physics and Astronomy

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