Synthesis and characterization of porous silsesquioxane dielectric films

Suzhu Yu; Terence K.S. Wong; Xiao Hu; Kantisara Pita

doi:10.1016/j.tsf.2004.03.040

Synthesis and characterization of porous silsesquioxane dielectric films

Suzhu Yu^*, Terence K.S. Wong, Xiao Hu, Kantisara Pita

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The silsesquioxane (SSQ) films with low dielectric constant have been successfully synthesized by covalently binding a thermally decomposable porogen [poly(amidoamine), PAMAM] to a host polymer (hydrogen methyl silsesquioxane, HMSQ) via a coupling agent. The decomposition behavior of the porogen as well as the thermal and dielectric properties of the host polymer heat-treated in different atmospheres have been studied and compared. The dielectric properties of the HMSQ-PAMAM porous films have been investigated as a function of porogen concentration. An average dielectric constant about 2.06 could be obtained with leakage current density on the order of 10^-7 A/cm² for a film with 20-wt.% loading of the PAMAM polymer.

Original language	English
Pages (from-to)	191-195
Number of pages	5
Journal	Thin Solid Films
Volume	473
Issue number	2
DOIs	https://doi.org/10.1016/j.tsf.2004.03.040
Publication status	Published - Feb 14 2005
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Keywords

Low dielectric constant
Nanoscale materials
Porous materials
Silsesquioxane
Synthesis and characterization

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10.1016/j.tsf.2004.03.040

Cite this

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title = "Synthesis and characterization of porous silsesquioxane dielectric films",

abstract = "The silsesquioxane (SSQ) films with low dielectric constant have been successfully synthesized by covalently binding a thermally decomposable porogen [poly(amidoamine), PAMAM] to a host polymer (hydrogen methyl silsesquioxane, HMSQ) via a coupling agent. The decomposition behavior of the porogen as well as the thermal and dielectric properties of the host polymer heat-treated in different atmospheres have been studied and compared. The dielectric properties of the HMSQ-PAMAM porous films have been investigated as a function of porogen concentration. An average dielectric constant about 2.06 could be obtained with leakage current density on the order of 10-7 A/cm2 for a film with 20-wt.% loading of the PAMAM polymer.",

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author = "Suzhu Yu and Wong, {Terence K.S.} and Xiao Hu and Kantisara Pita",

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T1 - Synthesis and characterization of porous silsesquioxane dielectric films

AU - Yu, Suzhu

AU - Wong, Terence K.S.

AU - Hu, Xiao

AU - Pita, Kantisara

PY - 2005/2/14

Y1 - 2005/2/14

N2 - The silsesquioxane (SSQ) films with low dielectric constant have been successfully synthesized by covalently binding a thermally decomposable porogen [poly(amidoamine), PAMAM] to a host polymer (hydrogen methyl silsesquioxane, HMSQ) via a coupling agent. The decomposition behavior of the porogen as well as the thermal and dielectric properties of the host polymer heat-treated in different atmospheres have been studied and compared. The dielectric properties of the HMSQ-PAMAM porous films have been investigated as a function of porogen concentration. An average dielectric constant about 2.06 could be obtained with leakage current density on the order of 10-7 A/cm2 for a film with 20-wt.% loading of the PAMAM polymer.

AB - The silsesquioxane (SSQ) films with low dielectric constant have been successfully synthesized by covalently binding a thermally decomposable porogen [poly(amidoamine), PAMAM] to a host polymer (hydrogen methyl silsesquioxane, HMSQ) via a coupling agent. The decomposition behavior of the porogen as well as the thermal and dielectric properties of the host polymer heat-treated in different atmospheres have been studied and compared. The dielectric properties of the HMSQ-PAMAM porous films have been investigated as a function of porogen concentration. An average dielectric constant about 2.06 could be obtained with leakage current density on the order of 10-7 A/cm2 for a film with 20-wt.% loading of the PAMAM polymer.

KW - Low dielectric constant

KW - Nanoscale materials

KW - Porous materials

KW - Silsesquioxane

KW - Synthesis and characterization

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Synthesis and characterization of porous silsesquioxane dielectric films

Abstract

ASJC Scopus Subject Areas

Keywords

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