TY - JOUR
T1 - Synthesis, characterization, and non-volatile memory device application of an n-substituted heteroacene
AU - Wang, Chengyuan
AU - Wang, Jiangxin
AU - Li, Pei Zhou
AU - Gao, Junkuo
AU - Tan, Si Yu
AU - Xiong, Wei Wei
AU - Hu, Benlin
AU - Lee, Pooi See
AU - Zhao, Yanli
AU - Zhang, Qichun
PY - 2014/3
Y1 - 2014/3
N2 - N-substituted heteroacenes have been widely used as electroactive layers in organic electronic devices, and only a few of them have been investigated in organic resistive memory devices. Here, a novel N-substituted heteroacene 2-(4'-(diphenylamino)phenyl)-4,11-bis((triisopropylsilyl)ethynyl)-1H-imidazo[4, 5-b]phenazine (DBIP) has been designed, synthesized, and characterized. Sandwich-structure memory devices based on DBIP have been fabricated and the devices show non-volatile and stable memory character with good endurance performance. Walk down memory lane: An N-substituted heteroacene 2-(4'-(diphenylamino)phenyl)-4,11-bis((triisopropylsilyl)ethynyl)-1H-imidazo[4, 5-b]phenazine (DBIP) has been designed, synthesized, and characterized. Sandwich-structure memory devices based on DBIP have been fabricated and the devices show non-volatile and stable memory character with good endurance performance.
AB - N-substituted heteroacenes have been widely used as electroactive layers in organic electronic devices, and only a few of them have been investigated in organic resistive memory devices. Here, a novel N-substituted heteroacene 2-(4'-(diphenylamino)phenyl)-4,11-bis((triisopropylsilyl)ethynyl)-1H-imidazo[4, 5-b]phenazine (DBIP) has been designed, synthesized, and characterized. Sandwich-structure memory devices based on DBIP have been fabricated and the devices show non-volatile and stable memory character with good endurance performance. Walk down memory lane: An N-substituted heteroacene 2-(4'-(diphenylamino)phenyl)-4,11-bis((triisopropylsilyl)ethynyl)-1H-imidazo[4, 5-b]phenazine (DBIP) has been designed, synthesized, and characterized. Sandwich-structure memory devices based on DBIP have been fabricated and the devices show non-volatile and stable memory character with good endurance performance.
KW - heteroacenes
KW - nitrogen heterocycles
KW - non-volatile memory device
KW - organic electronics
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U2 - 10.1002/asia.201301547
DO - 10.1002/asia.201301547
M3 - Article
AN - SCOPUS:84894551337
SN - 1861-4728
VL - 9
SP - 779
EP - 783
JO - Chemistry - An Asian Journal
JF - Chemistry - An Asian Journal
IS - 3
ER -