Synthesis, morphology and random laser action of ZnO nanostructures

L. Miao; S. Tanemura; Y. Ieda; M. Tanemura; Y. Hayashi; H. Y. Yang; S. P. Lau; B. K. Tay; Y. G. Cao

doi:10.1016/j.susc.2006.12.011

Synthesis, morphology and random laser action of ZnO nanostructures

L. Miao, S. Tanemura^*, Y. Ieda, M. Tanemura, Y. Hayashi, H. Y. Yang, S. P. Lau, B. K. Tay, Y. G. Cao

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

Three-dimensional (3-D) ZnO random-wall nanostructures and one-dimensional (1-D) ZnO nanorods were prepared on silicon substrates by a simple solid-vapour phase thermal sublimation technique. Optical pumped random lasing has been observed in the ZnO random-wall arrays with a threshold intensity of 0.38 MW/cm² in the emission wavelength from 380 to 395 nm. The optical gain was attributed to the closed-loop scattering and light amplification of the ZnO random-wall. The experimental result suggests that the morphology of nanostructure is the key factor to effect random lasing.

Original language	English
Pages (from-to)	2660-2663
Number of pages	4
Journal	Surface Science
Volume	601
Issue number	13
DOIs	https://doi.org/10.1016/j.susc.2006.12.011
Publication status	Published - Jul 1 2007
Externally published	Yes

ASJC Scopus Subject Areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Keywords

M.1. Zinc oxide
M.2. Nanostructure
M.3. Semiconducting surfaces
Random lasing
S.3. Evaporation and sublimation

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10.1016/j.susc.2006.12.011

Cite this

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title = "Synthesis, morphology and random laser action of ZnO nanostructures",

abstract = "Three-dimensional (3-D) ZnO random-wall nanostructures and one-dimensional (1-D) ZnO nanorods were prepared on silicon substrates by a simple solid-vapour phase thermal sublimation technique. Optical pumped random lasing has been observed in the ZnO random-wall arrays with a threshold intensity of 0.38 MW/cm2 in the emission wavelength from 380 to 395 nm. The optical gain was attributed to the closed-loop scattering and light amplification of the ZnO random-wall. The experimental result suggests that the morphology of nanostructure is the key factor to effect random lasing.",

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T1 - Synthesis, morphology and random laser action of ZnO nanostructures

AU - Miao, L.

AU - Tanemura, S.

AU - Ieda, Y.

AU - Tanemura, M.

AU - Hayashi, Y.

AU - Yang, H. Y.

AU - Lau, S. P.

AU - Tay, B. K.

AU - Cao, Y. G.

PY - 2007/7/1

Y1 - 2007/7/1

N2 - Three-dimensional (3-D) ZnO random-wall nanostructures and one-dimensional (1-D) ZnO nanorods were prepared on silicon substrates by a simple solid-vapour phase thermal sublimation technique. Optical pumped random lasing has been observed in the ZnO random-wall arrays with a threshold intensity of 0.38 MW/cm2 in the emission wavelength from 380 to 395 nm. The optical gain was attributed to the closed-loop scattering and light amplification of the ZnO random-wall. The experimental result suggests that the morphology of nanostructure is the key factor to effect random lasing.

AB - Three-dimensional (3-D) ZnO random-wall nanostructures and one-dimensional (1-D) ZnO nanorods were prepared on silicon substrates by a simple solid-vapour phase thermal sublimation technique. Optical pumped random lasing has been observed in the ZnO random-wall arrays with a threshold intensity of 0.38 MW/cm2 in the emission wavelength from 380 to 395 nm. The optical gain was attributed to the closed-loop scattering and light amplification of the ZnO random-wall. The experimental result suggests that the morphology of nanostructure is the key factor to effect random lasing.

KW - M.1. Zinc oxide

KW - M.2. Nanostructure

KW - M.3. Semiconducting surfaces

KW - Random lasing

KW - S.3. Evaporation and sublimation

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SP - 2660

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JO - Surface Science

JF - Surface Science

IS - 13

ER -

Synthesis, morphology and random laser action of ZnO nanostructures

Abstract

ASJC Scopus Subject Areas

Keywords

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