Synthesis of centimeter-scale monolayer tungsten disulfide film on gold foils

Seok Joon Yun; Sang Hoon Chae; Hyun Kim; Jin Cheol Park; Ji Hoon Park; Gang Hee Han; Joo Song Lee; Soo Min Kim; Hye Min Oh; Jinbong Seok; Mun Seok Jeong; Ki Kang Kim; Young Hee Lee

doi:10.1021/acsnano.5b01529

Synthesis of centimeter-scale monolayer tungsten disulfide film on gold foils

Seok Joon Yun, Sang Hoon Chae, Hyun Kim, Jin Cheol Park, Ji Hoon Park, Gang Hee Han, Joo Song Lee, Soo Min Kim, Hye Min Oh, Jinbong Seok, Mun Seok Jeong, Ki Kang Kim^*, Young Hee Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

183 Citations (Scopus)

Abstract

We report the synthesis of centimeter-scale monolayer WS₂ on gold foil by chemical vapor deposition. The limited tungsten and sulfur solubility in gold foil allows monolayer WS₂ film growth on gold surface. To ensure the coverage uniformity of monolayer WS₂ film, the tungsten source-coated substrate was placed in parallel with Au foil under hydrogen sulfide atmosphere. The high growth temperature near 935 °C helps to increase a domain size up to 420 μm. Gold foil is reused for the repeatable growth after bubbling transfer. The WS₂-based field effect transistor reveals an electron mobility of 20 cm² V^-1 s^-1 with high on-off ratio of ∼10⁸ at room temperature, which is the highest reported value from previous reports of CVD-grown WS₂ samples. The on-off ratio of integrated multiple FETs on the large area WS₂ film on SiO₂ (300 nm)/Si substrate shows within the same order, implying reasonable uniformity of WS₂ FET device characteristics over a large area of 3 × 1.5 cm².

Original language	English
Pages (from-to)	5510-5519
Number of pages	10
Journal	ACS Nano
Volume	9
Issue number	5
DOIs	https://doi.org/10.1021/acsnano.5b01529
Publication status	Published - May 26 2015
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 2015 American Chemical Society.

ASJC Scopus Subject Areas

General Materials Science
General Engineering
General Physics and Astronomy

Keywords

bubbling transfer
chemical vapor deposition
field effect transistor
gold
transition metal dichalcogenides
tungsten disulfide

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10.1021/acsnano.5b01529

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title = "Synthesis of centimeter-scale monolayer tungsten disulfide film on gold foils",

abstract = "We report the synthesis of centimeter-scale monolayer WS2 on gold foil by chemical vapor deposition. The limited tungsten and sulfur solubility in gold foil allows monolayer WS2 film growth on gold surface. To ensure the coverage uniformity of monolayer WS2 film, the tungsten source-coated substrate was placed in parallel with Au foil under hydrogen sulfide atmosphere. The high growth temperature near 935 °C helps to increase a domain size up to 420 μm. Gold foil is reused for the repeatable growth after bubbling transfer. The WS2-based field effect transistor reveals an electron mobility of 20 cm2 V-1 s-1 with high on-off ratio of ∼108 at room temperature, which is the highest reported value from previous reports of CVD-grown WS2 samples. The on-off ratio of integrated multiple FETs on the large area WS2 film on SiO2 (300 nm)/Si substrate shows within the same order, implying reasonable uniformity of WS2 FET device characteristics over a large area of 3 × 1.5 cm2.",

keywords = "bubbling transfer, chemical vapor deposition, field effect transistor, gold, transition metal dichalcogenides, tungsten disulfide",

author = "Yun, {Seok Joon} and Chae, {Sang Hoon} and Hyun Kim and Park, {Jin Cheol} and Park, {Ji Hoon} and Han, {Gang Hee} and Lee, {Joo Song} and Kim, {Soo Min} and Oh, {Hye Min} and Jinbong Seok and Jeong, {Mun Seok} and Kim, {Ki Kang} and Lee, {Young Hee}",

note = "Publisher Copyright: {\textcopyright} 2015 American Chemical Society.",

year = "2015",

month = may,

day = "26",

doi = "10.1021/acsnano.5b01529",

language = "English",

volume = "9",

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T1 - Synthesis of centimeter-scale monolayer tungsten disulfide film on gold foils

AU - Yun, Seok Joon

AU - Chae, Sang Hoon

AU - Kim, Hyun

AU - Park, Jin Cheol

AU - Park, Ji Hoon

AU - Han, Gang Hee

AU - Lee, Joo Song

AU - Kim, Soo Min

AU - Oh, Hye Min

AU - Seok, Jinbong

AU - Jeong, Mun Seok

AU - Kim, Ki Kang

AU - Lee, Young Hee

PY - 2015/5/26

Y1 - 2015/5/26

N2 - We report the synthesis of centimeter-scale monolayer WS2 on gold foil by chemical vapor deposition. The limited tungsten and sulfur solubility in gold foil allows monolayer WS2 film growth on gold surface. To ensure the coverage uniformity of monolayer WS2 film, the tungsten source-coated substrate was placed in parallel with Au foil under hydrogen sulfide atmosphere. The high growth temperature near 935 °C helps to increase a domain size up to 420 μm. Gold foil is reused for the repeatable growth after bubbling transfer. The WS2-based field effect transistor reveals an electron mobility of 20 cm2 V-1 s-1 with high on-off ratio of ∼108 at room temperature, which is the highest reported value from previous reports of CVD-grown WS2 samples. The on-off ratio of integrated multiple FETs on the large area WS2 film on SiO2 (300 nm)/Si substrate shows within the same order, implying reasonable uniformity of WS2 FET device characteristics over a large area of 3 × 1.5 cm2.

AB - We report the synthesis of centimeter-scale monolayer WS2 on gold foil by chemical vapor deposition. The limited tungsten and sulfur solubility in gold foil allows monolayer WS2 film growth on gold surface. To ensure the coverage uniformity of monolayer WS2 film, the tungsten source-coated substrate was placed in parallel with Au foil under hydrogen sulfide atmosphere. The high growth temperature near 935 °C helps to increase a domain size up to 420 μm. Gold foil is reused for the repeatable growth after bubbling transfer. The WS2-based field effect transistor reveals an electron mobility of 20 cm2 V-1 s-1 with high on-off ratio of ∼108 at room temperature, which is the highest reported value from previous reports of CVD-grown WS2 samples. The on-off ratio of integrated multiple FETs on the large area WS2 film on SiO2 (300 nm)/Si substrate shows within the same order, implying reasonable uniformity of WS2 FET device characteristics over a large area of 3 × 1.5 cm2.

KW - bubbling transfer

KW - chemical vapor deposition

KW - field effect transistor

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KW - transition metal dichalcogenides

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Synthesis of centimeter-scale monolayer tungsten disulfide film on gold foils

Abstract

Bibliographical note

ASJC Scopus Subject Areas

Keywords

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