Synthesis of Cu(In,Ga)(S,Se)2 thin films using an aqueous spray-pyrolysis approach, and their solar cell efficiency of 10.5%

Md Anower Hossain; Tianliang Zhang; Lee Kian Keat; Xianglin Li; Rajiv R. Prabhakar; Sudip K. Batabyal; Subodh G. Mhaisalkar; Lydia H. Wong

doi:10.1039/c4ta05783j

Synthesis of Cu(In,Ga)(S,Se)₂ thin films using an aqueous spray-pyrolysis approach, and their solar cell efficiency of 10.5%

Md Anower Hossain, Tianliang Zhang, Lee Kian Keat, Xianglin Li, Rajiv R. Prabhakar, Sudip K. Batabyal, Subodh G. Mhaisalkar, Lydia H. Wong^*

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

69 Citations (Scopus)

Abstract

Semiconducting Cu(In,Ga)(S,Se)₂ (CIGSSe) thin-film is prepared by the spray-pyrolysis of aqueous precursor solutions of copper (CuCl₂), indium (InCl₃), gallium (GaCl₃), and sulphur (SC(NH₂)₂) sources. The non-vacuum approach of making the CIGSSe thin film using environmentally benign halide-based aqueous precursor solutions paves the way for fabricating solar cells at a much cheaper cost. Here, gallium (Ga) is incorporated into the host lattice of CuIn(S,Se)₂ (CISSe) films grown on a Mo-coated soda-lime glass substrate to modify the optoelectronic properties of CIGSSe films. The bandgap engineered, Ga-doped CIGSSe film leads to better photovoltaic characteristics and shows one of the highest efficiency for CIGS thin film solar cell made by the non-vacuum deposition of environmentally-friendly precursors. The optimum efficiency of solar cells with the device configuration of glass/Mo/CIGSSe/CdS/i-ZnO/AZO show j-V characteristics of V_oc = 0.621 V, j_sc = 24.29 mA cm^-2, FF = 69.84%, and a power conversion efficiency of 10.54% under simulated AM 1.5, 100 mW cm^-2 illuminations, demonstrating its potential in making a cost-effective thin film solar cell.

Original language	English
Pages (from-to)	4147-4154
Number of pages	8
Journal	Journal of Materials Chemistry A
Volume	3
Issue number	8
DOIs	https://doi.org/10.1039/c4ta05783j
Publication status	Published - 2015
Externally published	Yes

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry 2015.

ASJC Scopus Subject Areas

General Chemistry
Renewable Energy, Sustainability and the Environment
General Materials Science

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This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1039/c4ta05783j

Cite this

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title = "Synthesis of Cu(In,Ga)(S,Se)2 thin films using an aqueous spray-pyrolysis approach, and their solar cell efficiency of 10.5%",

abstract = "Semiconducting Cu(In,Ga)(S,Se)2 (CIGSSe) thin-film is prepared by the spray-pyrolysis of aqueous precursor solutions of copper (CuCl2), indium (InCl3), gallium (GaCl3), and sulphur (SC(NH2)2) sources. The non-vacuum approach of making the CIGSSe thin film using environmentally benign halide-based aqueous precursor solutions paves the way for fabricating solar cells at a much cheaper cost. Here, gallium (Ga) is incorporated into the host lattice of CuIn(S,Se)2 (CISSe) films grown on a Mo-coated soda-lime glass substrate to modify the optoelectronic properties of CIGSSe films. The bandgap engineered, Ga-doped CIGSSe film leads to better photovoltaic characteristics and shows one of the highest efficiency for CIGS thin film solar cell made by the non-vacuum deposition of environmentally-friendly precursors. The optimum efficiency of solar cells with the device configuration of glass/Mo/CIGSSe/CdS/i-ZnO/AZO show j-V characteristics of Voc = 0.621 V, jsc = 24.29 mA cm-2, FF = 69.84%, and a power conversion efficiency of 10.54% under simulated AM 1.5, 100 mW cm-2 illuminations, demonstrating its potential in making a cost-effective thin film solar cell.",

author = "Hossain, {Md Anower} and Tianliang Zhang and Keat, {Lee Kian} and Xianglin Li and Prabhakar, {Rajiv R.} and Batabyal, {Sudip K.} and Mhaisalkar, {Subodh G.} and Wong, {Lydia H.}",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry 2015.",

year = "2015",

doi = "10.1039/c4ta05783j",

language = "English",

volume = "3",

pages = "4147--4154",

journal = "Journal of Materials Chemistry A",

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AU - Hossain, Md Anower

AU - Zhang, Tianliang

AU - Keat, Lee Kian

AU - Li, Xianglin

AU - Prabhakar, Rajiv R.

AU - Batabyal, Sudip K.

AU - Mhaisalkar, Subodh G.

AU - Wong, Lydia H.

PY - 2015

Y1 - 2015

N2 - Semiconducting Cu(In,Ga)(S,Se)2 (CIGSSe) thin-film is prepared by the spray-pyrolysis of aqueous precursor solutions of copper (CuCl2), indium (InCl3), gallium (GaCl3), and sulphur (SC(NH2)2) sources. The non-vacuum approach of making the CIGSSe thin film using environmentally benign halide-based aqueous precursor solutions paves the way for fabricating solar cells at a much cheaper cost. Here, gallium (Ga) is incorporated into the host lattice of CuIn(S,Se)2 (CISSe) films grown on a Mo-coated soda-lime glass substrate to modify the optoelectronic properties of CIGSSe films. The bandgap engineered, Ga-doped CIGSSe film leads to better photovoltaic characteristics and shows one of the highest efficiency for CIGS thin film solar cell made by the non-vacuum deposition of environmentally-friendly precursors. The optimum efficiency of solar cells with the device configuration of glass/Mo/CIGSSe/CdS/i-ZnO/AZO show j-V characteristics of Voc = 0.621 V, jsc = 24.29 mA cm-2, FF = 69.84%, and a power conversion efficiency of 10.54% under simulated AM 1.5, 100 mW cm-2 illuminations, demonstrating its potential in making a cost-effective thin film solar cell.

AB - Semiconducting Cu(In,Ga)(S,Se)2 (CIGSSe) thin-film is prepared by the spray-pyrolysis of aqueous precursor solutions of copper (CuCl2), indium (InCl3), gallium (GaCl3), and sulphur (SC(NH2)2) sources. The non-vacuum approach of making the CIGSSe thin film using environmentally benign halide-based aqueous precursor solutions paves the way for fabricating solar cells at a much cheaper cost. Here, gallium (Ga) is incorporated into the host lattice of CuIn(S,Se)2 (CISSe) films grown on a Mo-coated soda-lime glass substrate to modify the optoelectronic properties of CIGSSe films. The bandgap engineered, Ga-doped CIGSSe film leads to better photovoltaic characteristics and shows one of the highest efficiency for CIGS thin film solar cell made by the non-vacuum deposition of environmentally-friendly precursors. The optimum efficiency of solar cells with the device configuration of glass/Mo/CIGSSe/CdS/i-ZnO/AZO show j-V characteristics of Voc = 0.621 V, jsc = 24.29 mA cm-2, FF = 69.84%, and a power conversion efficiency of 10.54% under simulated AM 1.5, 100 mW cm-2 illuminations, demonstrating its potential in making a cost-effective thin film solar cell.

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