Synthesis of organically modified mesoporous silica as a low dielectric constant intermetal dielectric

Suzhu Yu; Terence K.S. Wong; Kantisara Pita; Xiao Hu

doi:10.1116/1.1506904

Synthesis of organically modified mesoporous silica as a low dielectric constant intermetal dielectric

Suzhu Yu^*, Terence K.S. Wong, Kantisara Pita, Xiao Hu

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Uniform mesoporous silica films with a dielectric constant of about 2.0 were produced using multiple-step sol-gel process. The dielectric constant of the film, with equal amount of TEOS and MTES, was found to increase from 1.9 to 2.2 in the first five day and then change slightly when the film was subjected to aging at ambient environment over 40 days. FTIR analysis of the films demonstrates that there was very little water present and gives an important clue to their composition and structure.

Original language	English
Pages (from-to)	2036-2042
Number of pages	7
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	5
DOIs	https://doi.org/10.1116/1.1506904
Publication status	Published - Sept 2002
Externally published	Yes

ASJC Scopus Subject Areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Synthesis of organically modified mesoporous silica as a low dielectric constant intermetal dielectric

Abstract

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