TY - JOUR
T1 - Synthesis of silicon carbide nitride nanocomposite films by a simple electrochemical method
AU - Yan, X. B.
AU - Tay, B. K.
AU - Chen, G.
AU - Yang, S. R.
PY - 2006/5
Y1 - 2006/5
N2 - Silicon carbide nitride (SiCN) nanocomposite films have been deposited on silicon substrates by using of a simple electrochemical method from a methanol solution of hexamethyldisilazane ((CH3)3-Si-NH-Si-(CH3)3, HMDSN) at atmospheric pressure and low temperature. The electrodeposited composite films were characterized by XPS, FTIR, XRD, and AFM, respectively. As the results, the films are amorphous carbon films containing β-Si3N4, α-Si3N4, and SiC crystalline grains. The introduction of HMDSN contributes to promote the growth of the carbon films and leads to the formation of the Si3N4 and SiC crystalline grains.
AB - Silicon carbide nitride (SiCN) nanocomposite films have been deposited on silicon substrates by using of a simple electrochemical method from a methanol solution of hexamethyldisilazane ((CH3)3-Si-NH-Si-(CH3)3, HMDSN) at atmospheric pressure and low temperature. The electrodeposited composite films were characterized by XPS, FTIR, XRD, and AFM, respectively. As the results, the films are amorphous carbon films containing β-Si3N4, α-Si3N4, and SiC crystalline grains. The introduction of HMDSN contributes to promote the growth of the carbon films and leads to the formation of the Si3N4 and SiC crystalline grains.
KW - Composite film
KW - Crystalline
KW - Electrochemical deposition
KW - SiCN
KW - XPS
UR - http://www.scopus.com/inward/record.url?scp=33646181976&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33646181976&partnerID=8YFLogxK
U2 - 10.1016/j.elecom.2006.03.005
DO - 10.1016/j.elecom.2006.03.005
M3 - Article
AN - SCOPUS:33646181976
SN - 1388-2481
VL - 8
SP - 737
EP - 740
JO - Electrochemistry Communications
JF - Electrochemistry Communications
IS - 5
ER -