Abstract
Chemical vapor deposition (CVD) is a scalable method able to synthesize MoS2 and WS2 monolayers. In this work, we reduced the synthesis temperature by 200 °C only by introducing tellurium (Te) into the CVD process. The as-synthesized MoS2 and WS2 monolayers show high phase purity and crystallinity. The optical and electrical performance of these materials is comparable to those synthesized at higher temperatures. We believe this work will accelerate the industrial synthesis of these semiconducting monolayers.
Original language | English |
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Pages (from-to) | 11658-11666 |
Number of pages | 9 |
Journal | ACS Nano |
Volume | 9 |
Issue number | 12 |
DOIs | |
Publication status | Published - Oct 26 2015 |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2015 American Chemical Society.
ASJC Scopus Subject Areas
- General Materials Science
- General Engineering
- General Physics and Astronomy
Keywords
- chemical vapor deposition
- molybdenum disulfide
- transition metal dichalcogenides
- tungsten disulfide
- two-dimensional materials