@inproceedings{875d882742864785a4d305c3ecbe0176,
title = "Test structure design for precise understanding of Cu/low-k dielectric reliability",
abstract = "Single line test structures are suggested for failure analysis and reliability improvement development, apart from using the conventional comb test structures. This is due to the challenges in controlling the damage after electrical tests as well as in pin-pointing sub-surface failures with present techniques. Three failure modes were observed in the new test structure, which can be identified by its I-V leakage characteristics. These also demonstrate the importance of including different geometrical layouts for backend reliability characterization.",
keywords = "Carbon-doped low-k dielectric, Delamination, Single line test structure, Ta ion diffusion",
author = "Tan, \{T. L.\} and Gan, \{C. L.\} and Du, \{A. Y.\} and Cheng, \{C. K.\} and Ng, \{C. M.\} and L. Chan",
year = "2007",
doi = "10.1109/RELPHY.2007.369986",
language = "English",
isbn = "1424409195",
series = "Annual Proceedings - Reliability Physics (Symposium)",
pages = "632--633",
booktitle = "2007 IEEE International Reliability Physics Symposium Proceedings, 45th Annual",
note = "45th Annual IEEE International Reliability Physics Symposium 2007, IRPS ; Conference date: 15-04-2007 Through 19-04-2007",
}