Textured Ni(Pt) germanosilicide formation on a condensed Si1-x Gex /Si Substrate

Y. Setiawan; S. Balakumar; E. J. Tan; K. L. Pey; P. S. Lee

doi:10.1149/1.3121204

Textured Ni(Pt) germanosilicide formation on a condensed Si_1-x Ge_x /Si Substrate

Y. Setiawan^*, S. Balakumar, E. J. Tan, K. L. Pey, P. S. Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A study of Ni and Ni(Pt) germanosilicidation on a condensed Si _1-x Ge_x /Si substrate was performed. The partial relaxation of the condensed SiGe layer resulted in an improvement in the morphological stability of the germanosilicide through the alleviation of compressive stress. Pt alloying to the Ni film resulted in highly textured Ni(Pt) germanosilicide grains, particularly in the (002) orientation, due to the reduction in the interfacial energy caused by the presence of Pt alloy. Pt atoms diffuse slowly and result in a variation in lattice parameters in the Ni(Pt)SiGe grain as a function of depth. Nevertheless, Pt alloying has increased the morphological stability of the NiPtSiGe film.

Original language	English
Pages (from-to)	H500-H504
Journal	Journal of the Electrochemical Society
Volume	156
Issue number	6
DOIs	https://doi.org/10.1149/1.3121204
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.3121204

Cite this

@article{6a576b664d104fbda3b2d8a8a6d0e47e,

title = "Textured Ni(Pt) germanosilicide formation on a condensed Si1-x Gex /Si Substrate",

abstract = "A study of Ni and Ni(Pt) germanosilicidation on a condensed Si 1-x Gex /Si substrate was performed. The partial relaxation of the condensed SiGe layer resulted in an improvement in the morphological stability of the germanosilicide through the alleviation of compressive stress. Pt alloying to the Ni film resulted in highly textured Ni(Pt) germanosilicide grains, particularly in the (002) orientation, due to the reduction in the interfacial energy caused by the presence of Pt alloy. Pt atoms diffuse slowly and result in a variation in lattice parameters in the Ni(Pt)SiGe grain as a function of depth. Nevertheless, Pt alloying has increased the morphological stability of the NiPtSiGe film.",

author = "Y. Setiawan and S. Balakumar and Tan, {E. J.} and Pey, {K. L.} and Lee, {P. S.}",

year = "2009",

doi = "10.1149/1.3121204",

language = "English",

volume = "156",

pages = "H500--H504",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "6",

}

TY - JOUR

T1 - Textured Ni(Pt) germanosilicide formation on a condensed Si1-x Gex /Si Substrate

AU - Setiawan, Y.

AU - Balakumar, S.

AU - Tan, E. J.

AU - Pey, K. L.

AU - Lee, P. S.

PY - 2009

Y1 - 2009

N2 - A study of Ni and Ni(Pt) germanosilicidation on a condensed Si 1-x Gex /Si substrate was performed. The partial relaxation of the condensed SiGe layer resulted in an improvement in the morphological stability of the germanosilicide through the alleviation of compressive stress. Pt alloying to the Ni film resulted in highly textured Ni(Pt) germanosilicide grains, particularly in the (002) orientation, due to the reduction in the interfacial energy caused by the presence of Pt alloy. Pt atoms diffuse slowly and result in a variation in lattice parameters in the Ni(Pt)SiGe grain as a function of depth. Nevertheless, Pt alloying has increased the morphological stability of the NiPtSiGe film.

AB - A study of Ni and Ni(Pt) germanosilicidation on a condensed Si 1-x Gex /Si substrate was performed. The partial relaxation of the condensed SiGe layer resulted in an improvement in the morphological stability of the germanosilicide through the alleviation of compressive stress. Pt alloying to the Ni film resulted in highly textured Ni(Pt) germanosilicide grains, particularly in the (002) orientation, due to the reduction in the interfacial energy caused by the presence of Pt alloy. Pt atoms diffuse slowly and result in a variation in lattice parameters in the Ni(Pt)SiGe grain as a function of depth. Nevertheless, Pt alloying has increased the morphological stability of the NiPtSiGe film.

UR - http://www.scopus.com/inward/record.url?scp=65449181554&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=65449181554&partnerID=8YFLogxK

U2 - 10.1149/1.3121204

DO - 10.1149/1.3121204

M3 - Article

AN - SCOPUS:65449181554

SN - 0013-4651

VL - 156

SP - H500-H504

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 6

ER -