The analysis of dielectric breakdown in Cu/low-k interconnect system

Nam Hwang; Tam Lyn Tan; Kuo Cheng; An Yan Du; Chee Lip Gan; Dim Lee Kwong

doi:10.1109/ESSDER.2006.307722

The analysis of dielectric breakdown in Cu/low-k interconnect system

Nam Hwang^*, Tam Lyn Tan, Kuo Cheng, An Yan Du, Chee Lip Gan, Dim Lee Kwong

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Novel test structures were designed for TEM analysis to examine the origin of dielectric breakdown in Cu/low-k interconnect systems, and it was found to be associated with interfacial delamination. Using an electrostatic discharge zapping technique enables the dielectric breakdown monitoring progressively from the interfacial delamination between a SiC capping layer and a SiOC inter-dielectric layer to the catastrophic thermal breakdown of Cu/low-k interconnect system. The intermetal dielectric leakage current increased as the delamination becomes wider in terms of the number of electrostatic zaps.

Original language	English
Title of host publication	ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference
Publisher	IEEE Computer Society
Pages	399-402
Number of pages	4
ISBN (Print)	1424403014, 9781424403011
DOIs	https://doi.org/10.1109/ESSDER.2006.307722
Publication status	Published - 2006
Externally published	Yes
Event	ESSDERC 2006 - 36th European Solid-State Device Research Conference - Montreux, Switzerland Duration: Sept 19 2006 → Sept 21 2006

Publication series

Name	ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

Conference

Conference	ESSDERC 2006 - 36th European Solid-State Device Research Conference
Country/Territory	Switzerland
City	Montreux
Period	9/19/06 → 9/21/06

ASJC Scopus Subject Areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ESSDER.2006.307722

Cite this

Hwang, N., Tan, T. L., Cheng, K., Du, A. Y., Gan, C. L., & Kwong, D. L. (2006). The analysis of dielectric breakdown in Cu/low-k interconnect system. In ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference (pp. 399-402). Article 4099940 (ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference). IEEE Computer Society. https://doi.org/10.1109/ESSDER.2006.307722

@inproceedings{b9c4895a84684fec88bcb5a566821d9d,

title = "The analysis of dielectric breakdown in Cu/low-k interconnect system",

abstract = "Novel test structures were designed for TEM analysis to examine the origin of dielectric breakdown in Cu/low-k interconnect systems, and it was found to be associated with interfacial delamination. Using an electrostatic discharge zapping technique enables the dielectric breakdown monitoring progressively from the interfacial delamination between a SiC capping layer and a SiOC inter-dielectric layer to the catastrophic thermal breakdown of Cu/low-k interconnect system. The intermetal dielectric leakage current increased as the delamination becomes wider in terms of the number of electrostatic zaps.",

author = "Nam Hwang and Tan, \{Tam Lyn\} and Kuo Cheng and Du, \{An Yan\} and Gan, \{Chee Lip\} and Kwong, \{Dim Lee\}",

year = "2006",

doi = "10.1109/ESSDER.2006.307722",

language = "English",

isbn = "1424403014",

series = "ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "399--402",

booktitle = "ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference",

address = "United States",

note = "ESSDERC 2006 - 36th European Solid-State Device Research Conference ; Conference date: 19-09-2006 Through 21-09-2006",

}

Hwang, N, Tan, TL, Cheng, K, Du, AY, Gan, CL & Kwong, DL 2006, The analysis of dielectric breakdown in Cu/low-k interconnect system. in ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference., 4099940, ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference, IEEE Computer Society, pp. 399-402, ESSDERC 2006 - 36th European Solid-State Device Research Conference, Montreux, Switzerland, 9/19/06. https://doi.org/10.1109/ESSDER.2006.307722

The analysis of dielectric breakdown in Cu/low-k interconnect system. / Hwang, Nam; Tan, Tam Lyn; Cheng, Kuo et al.
ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference. IEEE Computer Society, 2006. p. 399-402 4099940 (ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Tan, Tam Lyn

AU - Cheng, Kuo

AU - Du, An Yan

AU - Gan, Chee Lip

AU - Kwong, Dim Lee

PY - 2006

Y1 - 2006

N2 - Novel test structures were designed for TEM analysis to examine the origin of dielectric breakdown in Cu/low-k interconnect systems, and it was found to be associated with interfacial delamination. Using an electrostatic discharge zapping technique enables the dielectric breakdown monitoring progressively from the interfacial delamination between a SiC capping layer and a SiOC inter-dielectric layer to the catastrophic thermal breakdown of Cu/low-k interconnect system. The intermetal dielectric leakage current increased as the delamination becomes wider in terms of the number of electrostatic zaps.

AB - Novel test structures were designed for TEM analysis to examine the origin of dielectric breakdown in Cu/low-k interconnect systems, and it was found to be associated with interfacial delamination. Using an electrostatic discharge zapping technique enables the dielectric breakdown monitoring progressively from the interfacial delamination between a SiC capping layer and a SiOC inter-dielectric layer to the catastrophic thermal breakdown of Cu/low-k interconnect system. The intermetal dielectric leakage current increased as the delamination becomes wider in terms of the number of electrostatic zaps.

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DO - 10.1109/ESSDER.2006.307722

M3 - Conference contribution

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SN - 1424403014

SN - 9781424403011

T3 - ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

SP - 399

EP - 402

BT - ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference

PB - IEEE Computer Society

T2 - ESSDERC 2006 - 36th European Solid-State Device Research Conference

Y2 - 19 September 2006 through 21 September 2006

ER -

Hwang N, Tan TL, Cheng K, Du AY, Gan CL, Kwong DL. The analysis of dielectric breakdown in Cu/low-k interconnect system. In ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference. IEEE Computer Society. 2006. p. 399-402. 4099940. (ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference). doi: 10.1109/ESSDER.2006.307722

The analysis of dielectric breakdown in Cu/low-k interconnect system

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