The effect of annealing temperature on the optical properties of in2s3 thin film

Xu Boxi; Mulmudi Hemant Kumar; Rajiv Ramanujam Prabhakar; Nripan Mathews; Subodh G. Mhaisalkar

doi:10.1166/nnl.2012.1386

The effect of annealing temperature on the optical properties of in2s3 thin film

Xu Boxi, Mulmudi Hemant Kumar, Rajiv Ramanujam Prabhakar, Nripan Mathews, Subodh G. Mhaisalkar^*

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

Abstract

Indium Sulfide (In2S3) thin film were deposited on glass substrate through successive ionic layer adsorption and reaction (SILAR) method. The samples were annealed at 250 °C, 350 °C and 450 °C respectively after deposition. The X-ray diffraction (XRD) analysis shows that the sample annealed at 450 °C has the most clear and obvious XRD pattern, which indicates that In2S3 annealed at 450 °C possess the highest crystallinity. Ultraviolet-visible spectroscopy analysis of the samples shows that the band gap of In2S3 is around 2 eV. This study shows that annealing does not induce any change in optical bandgap of In2S3 thin films on glass substrates as reported elsewhere.

Original language	English
Pages (from-to)	747-749
Number of pages	3
Journal	Nanoscience and Nanotechnology Letters
Volume	4
Issue number	7
DOIs	https://doi.org/10.1166/nnl.2012.1386
Publication status	Published - Jul 2012
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science

Keywords

Annealing
Bandgap
Crystallinity
Indium Sulfide
Solar Cell

Access to Document

10.1166/nnl.2012.1386

Cite this

@article{ada6d3c4005646128c93dc7840eb92a3,

title = "The effect of annealing temperature on the optical properties of in2s3 thin film",

abstract = "Indium Sulfide (In2S3) thin film were deposited on glass substrate through successive ionic layer adsorption and reaction (SILAR) method. The samples were annealed at 250 °C, 350 °C and 450 °C respectively after deposition. The X-ray diffraction (XRD) analysis shows that the sample annealed at 450 °C has the most clear and obvious XRD pattern, which indicates that In2S3 annealed at 450 °C possess the highest crystallinity. Ultraviolet-visible spectroscopy analysis of the samples shows that the band gap of In2S3 is around 2 eV. This study shows that annealing does not induce any change in optical bandgap of In2S3 thin films on glass substrates as reported elsewhere.",

keywords = "Annealing, Bandgap, Crystallinity, Indium Sulfide, Solar Cell",

author = "Xu Boxi and Kumar, {Mulmudi Hemant} and Prabhakar, {Rajiv Ramanujam} and Nripan Mathews and Mhaisalkar, {Subodh G.}",

year = "2012",

month = jul,

doi = "10.1166/nnl.2012.1386",

language = "English",

volume = "4",

pages = "747--749",

journal = "Nanoscience and Nanotechnology Letters",

issn = "1941-4900",

publisher = "American Scientific Publishers",

number = "7",

}

TY - JOUR

T1 - The effect of annealing temperature on the optical properties of in2s3 thin film

AU - Boxi, Xu

AU - Kumar, Mulmudi Hemant

AU - Prabhakar, Rajiv Ramanujam

AU - Mathews, Nripan

AU - Mhaisalkar, Subodh G.

PY - 2012/7

Y1 - 2012/7

N2 - Indium Sulfide (In2S3) thin film were deposited on glass substrate through successive ionic layer adsorption and reaction (SILAR) method. The samples were annealed at 250 °C, 350 °C and 450 °C respectively after deposition. The X-ray diffraction (XRD) analysis shows that the sample annealed at 450 °C has the most clear and obvious XRD pattern, which indicates that In2S3 annealed at 450 °C possess the highest crystallinity. Ultraviolet-visible spectroscopy analysis of the samples shows that the band gap of In2S3 is around 2 eV. This study shows that annealing does not induce any change in optical bandgap of In2S3 thin films on glass substrates as reported elsewhere.

AB - Indium Sulfide (In2S3) thin film were deposited on glass substrate through successive ionic layer adsorption and reaction (SILAR) method. The samples were annealed at 250 °C, 350 °C and 450 °C respectively after deposition. The X-ray diffraction (XRD) analysis shows that the sample annealed at 450 °C has the most clear and obvious XRD pattern, which indicates that In2S3 annealed at 450 °C possess the highest crystallinity. Ultraviolet-visible spectroscopy analysis of the samples shows that the band gap of In2S3 is around 2 eV. This study shows that annealing does not induce any change in optical bandgap of In2S3 thin films on glass substrates as reported elsewhere.

KW - Annealing

KW - Bandgap

KW - Crystallinity

KW - Indium Sulfide

KW - Solar Cell

UR - http://www.scopus.com/inward/record.url?scp=84864843607&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864843607&partnerID=8YFLogxK

U2 - 10.1166/nnl.2012.1386

DO - 10.1166/nnl.2012.1386

M3 - Article

AN - SCOPUS:84864843607

SN - 1941-4900

VL - 4

SP - 747

EP - 749

JO - Nanoscience and Nanotechnology Letters

JF - Nanoscience and Nanotechnology Letters

IS - 7

ER -

The effect of annealing temperature on the optical properties of in2s3 thin film

Abstract

ASJC Scopus Subject Areas

Keywords

Access to Document

Other files and links

Fingerprint

Cite this