TY - GEN
T1 - The influence of titanium nitride barrier layer on the properties of CNT bundles
AU - Yap, Chin Chong
AU - Tan, Dunlin
AU - Brun, Christophe
AU - Li, Hong
AU - Teo, Edwin Hang Tong
AU - Dominique, Baillargeat
AU - Tay, Beng Kang
PY - 2013
Y1 - 2013
N2 - The use of carbon nanotubes (CNTs) for electrical interconnections is hinder by the possibility of growing CNT directly onto metallization. The introduction of barrier layer between catalyst and metallization is thus essential to permit the direct growth of vertically aligned CNT bundles using CVD approaches. As a result, the resultant CNT bundle resistivity is not only a function of the densities and quality of CNT growth, but is also affected by the thickness and resistivity of the barrier layer. CNT is growth on different thickness of TiN with 2 different underlying layers (Au and SiO2). It was observed that the length of CNT grown on Au is independent of TiN thickness, whereas the height decreases for Au underlayers case. In both scenarios, both have well aligned CNTs growth when the thickness of TiN is < 90nm.
AB - The use of carbon nanotubes (CNTs) for electrical interconnections is hinder by the possibility of growing CNT directly onto metallization. The introduction of barrier layer between catalyst and metallization is thus essential to permit the direct growth of vertically aligned CNT bundles using CVD approaches. As a result, the resultant CNT bundle resistivity is not only a function of the densities and quality of CNT growth, but is also affected by the thickness and resistivity of the barrier layer. CNT is growth on different thickness of TiN with 2 different underlying layers (Au and SiO2). It was observed that the length of CNT grown on Au is independent of TiN thickness, whereas the height decreases for Au underlayers case. In both scenarios, both have well aligned CNTs growth when the thickness of TiN is < 90nm.
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U2 - 10.1109/INEC.2013.6465937
DO - 10.1109/INEC.2013.6465937
M3 - Conference contribution
AN - SCOPUS:84874786748
SN - 9781467348416
T3 - Proceedings - Winter Simulation Conference
SP - 4
EP - 6
BT - Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
T2 - 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Y2 - 2 January 2013 through 4 January 2013
ER -