The overview of the impacts of electron radiation on semiconductor failure analysis by SEM, FIB and TEM

Binghai Liu, Younan Hua, Zhili Dong, Pik Kee Tan, Yuzhe Zhao, Zhiqiang Mo, Jeffrey Lam, Zhihong Mai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The paper briefly overviewed electron-beam radiation damage and its impacts on physical failure analysis by SEM, FIB and TEM. Based on our electron radiation study on some typical electron-beam sensitive materials, we discussed some interesting results associated with electron radiation damage to Lk/ULK, silicon nitride and CoFeB thin film materials in semiconductor and MRAM devices. The details included radiation induced microstructure changes., material diffusion and phase transformation. The underlying mechanism was also briefly discussed for electron radiation damage to different materials.

Original languageEnglish
Title of host publicationIPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Print)9781538649299
DOIs
Publication statusPublished - Aug 30 2018
Externally publishedYes
Event25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 - Singapore, Singapore
Duration: Jul 16 2018Jul 19 2018

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2018-July

Conference

Conference25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018
Country/TerritorySingapore
CitySingapore
Period7/16/187/19/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

ASJC Scopus Subject Areas

  • Electrical and Electronic Engineering

Keywords

  • electron beam radiation
  • electron beam sensitive
  • failure analysis
  • FIB
  • radiation damage
  • SEM
  • TEM

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