Abstract
The paper briefly overviewed electron-beam radiation damage and its impacts on physical failure analysis by SEM, FIB and TEM. Based on our electron radiation study on some typical electron-beam sensitive materials, we discussed some interesting results associated with electron radiation damage to Lk/ULK, silicon nitride and CoFeB thin film materials in semiconductor and MRAM devices. The details included radiation induced microstructure changes., material diffusion and phase transformation. The underlying mechanism was also briefly discussed for electron radiation damage to different materials.
Original language | English |
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Title of host publication | IPFA 2018 - 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
ISBN (Print) | 9781538649299 |
DOIs | |
Publication status | Published - Aug 30 2018 |
Externally published | Yes |
Event | 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 - Singapore, Singapore Duration: Jul 16 2018 → Jul 19 2018 |
Publication series
Name | Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA |
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Volume | 2018-July |
Conference
Conference | 25th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2018 |
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Country/Territory | Singapore |
City | Singapore |
Period | 7/16/18 → 7/19/18 |
Bibliographical note
Publisher Copyright:© 2018 IEEE.
ASJC Scopus Subject Areas
- Electrical and Electronic Engineering
Keywords
- electron beam radiation
- electron beam sensitive
- failure analysis
- FIB
- radiation damage
- SEM
- TEM