The properties and structure relationship of half metallic magnetic materials on gaas

Sameh S.A. Hassan; Yongbing Xu; Jing Wu; Jian Guo Zheng; Jianyu Y. Huang; Yizhong Huang; Christian D. Damsgaard; Jørn B. Hansen; Claus S. Jacobsen

doi:10.1109/TMAG.2009.2024768

The properties and structure relationship of half metallic magnetic materials on gaas

Sameh S.A. Hassan, Yongbing Xu^*, Jing Wu, Jian Guo Zheng, Jianyu Y. Huang, Yizhong Huang, Christian D. Damsgaard, Jørn B. Hansen, Claus S. Jacobsen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report the magnetic and transport properties of two promising half metallic/GaAs hybrid spintronic structures with respect to their structural features. The Co₂ MnGa/GaAs(100) has shown a very low magnetic moment which is attributed to the columnar structure and the interface amorphous layer as from the HRTEM images. The out of plane hysteresis loops have shown a double switching which is related to the interface layer with different magnetic properties. In the Fe₃ O₄/GaAs(100) system, the fast saturation of the magnetization indicates the low antiphase boundaries, which is supported by the HRTEM image. Furthermore, the moderate barrier height and the heavily damped processional response to the applied field pulses may be related to the interface structure.

Original language	English
Article number	5257364
Pages (from-to)	4360-4363
Number of pages	4
Journal	IEEE Transactions on Magnetics
Volume	45
Issue number	10
DOIs	https://doi.org/10.1109/TMAG.2009.2024768
Publication status	Published - Oct 2009
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Keywords

Gallium arsenide (GaAs)
Heusler alloys
Magnetic oxides
Magnetite
Molecular-beam epitaxy
Spintronics
Ultra-thin films

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10.1109/TMAG.2009.2024768

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title = "The properties and structure relationship of half metallic magnetic materials on gaas",

abstract = "We report the magnetic and transport properties of two promising half metallic/GaAs hybrid spintronic structures with respect to their structural features. The Co2 MnGa/GaAs(100) has shown a very low magnetic moment which is attributed to the columnar structure and the interface amorphous layer as from the HRTEM images. The out of plane hysteresis loops have shown a double switching which is related to the interface layer with different magnetic properties. In the Fe3 O4/GaAs(100) system, the fast saturation of the magnetization indicates the low antiphase boundaries, which is supported by the HRTEM image. Furthermore, the moderate barrier height and the heavily damped processional response to the applied field pulses may be related to the interface structure.",

keywords = "Gallium arsenide (GaAs), Heusler alloys, Magnetic oxides, Magnetite, Molecular-beam epitaxy, Spintronics, Ultra-thin films",

author = "Hassan, {Sameh S.A.} and Yongbing Xu and Jing Wu and Zheng, {Jian Guo} and Huang, {Jianyu Y.} and Yizhong Huang and Damsgaard, {Christian D.} and Hansen, {J{\o}rn B.} and Jacobsen, {Claus S.}",

year = "2009",

month = oct,

doi = "10.1109/TMAG.2009.2024768",

language = "English",

volume = "45",

pages = "4360--4363",

journal = "IEEE Transactions on Magnetics",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - The properties and structure relationship of half metallic magnetic materials on gaas

AU - Hassan, Sameh S.A.

AU - Xu, Yongbing

AU - Wu, Jing

AU - Zheng, Jian Guo

AU - Huang, Jianyu Y.

AU - Huang, Yizhong

AU - Damsgaard, Christian D.

AU - Hansen, Jørn B.

AU - Jacobsen, Claus S.

PY - 2009/10

Y1 - 2009/10

N2 - We report the magnetic and transport properties of two promising half metallic/GaAs hybrid spintronic structures with respect to their structural features. The Co2 MnGa/GaAs(100) has shown a very low magnetic moment which is attributed to the columnar structure and the interface amorphous layer as from the HRTEM images. The out of plane hysteresis loops have shown a double switching which is related to the interface layer with different magnetic properties. In the Fe3 O4/GaAs(100) system, the fast saturation of the magnetization indicates the low antiphase boundaries, which is supported by the HRTEM image. Furthermore, the moderate barrier height and the heavily damped processional response to the applied field pulses may be related to the interface structure.

AB - We report the magnetic and transport properties of two promising half metallic/GaAs hybrid spintronic structures with respect to their structural features. The Co2 MnGa/GaAs(100) has shown a very low magnetic moment which is attributed to the columnar structure and the interface amorphous layer as from the HRTEM images. The out of plane hysteresis loops have shown a double switching which is related to the interface layer with different magnetic properties. In the Fe3 O4/GaAs(100) system, the fast saturation of the magnetization indicates the low antiphase boundaries, which is supported by the HRTEM image. Furthermore, the moderate barrier height and the heavily damped processional response to the applied field pulses may be related to the interface structure.

KW - Gallium arsenide (GaAs)

KW - Heusler alloys

KW - Magnetic oxides

KW - Magnetite

KW - Molecular-beam epitaxy

KW - Spintronics

KW - Ultra-thin films

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JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 10

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ER -

The properties and structure relationship of half metallic magnetic materials on gaas

Abstract

ASJC Scopus Subject Areas

Keywords

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