Thermal reaction of nickel and Si0.75Ge0.25 alloy

K. L. Pey; W. K. Choi; S. Chattopadhyay; H. B. Zhao; E. A. Fitzgerald; D. A. Antoniadis; P. S. Lee

doi:10.1116/1.1507339

Thermal reaction of nickel and Si_0.75Ge_0.25 alloy

K. L. Pey^*, W. K. Choi, S. Chattopadhyay, H. B. Zhao, E. A. Fitzgerald, D. A. Antoniadis, P. S. Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

55 Citations (Scopus)

Abstract

Thermal reactions of nickel and Si_0.75Ge_0.25 alloy were investigated. The silicided films were characterized by X-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, transmission electron microscopy, and micro-Raman microscopy techniques. It was found that the sheet resistance of the silicided films increased abruptly for annealing temperature above 800°C.

Original language	English
Pages (from-to)	1903-1910
Number of pages	8
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	20
Issue number	6
DOIs	https://doi.org/10.1116/1.1507339
Publication status	Published - Nov 2002
Externally published	Yes

ASJC Scopus Subject Areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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abstract = "Thermal reactions of nickel and Si0.75Ge0.25 alloy were investigated. The silicided films were characterized by X-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, transmission electron microscopy, and micro-Raman microscopy techniques. It was found that the sheet resistance of the silicided films increased abruptly for annealing temperature above 800°C.",

author = "Pey, {K. L.} and Choi, {W. K.} and S. Chattopadhyay and Zhao, {H. B.} and Fitzgerald, {E. A.} and Antoniadis, {D. A.} and Lee, {P. S.}",

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AU - Choi, W. K.

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AU - Antoniadis, D. A.

AU - Lee, P. S.

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N2 - Thermal reactions of nickel and Si0.75Ge0.25 alloy were investigated. The silicided films were characterized by X-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, transmission electron microscopy, and micro-Raman microscopy techniques. It was found that the sheet resistance of the silicided films increased abruptly for annealing temperature above 800°C.

AB - Thermal reactions of nickel and Si0.75Ge0.25 alloy were investigated. The silicided films were characterized by X-ray diffraction, Auger electron spectroscopy, scanning electron microscopy, transmission electron microscopy, and micro-Raman microscopy techniques. It was found that the sheet resistance of the silicided films increased abruptly for annealing temperature above 800°C.

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Thermal reaction of nickel and Si_0.75Ge_0.25 alloy

Abstract

ASJC Scopus Subject Areas

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