Thermal stability of strained Si/Si1-xGex heterostructures for advanced microelectronics devices

L. H. Wong; C. C. Wong; K. K. Ong; J. P. Liu; L. Chan; R. Rao; K. L. Pey; L. Liu; Z. X. Shen

doi:10.1016/j.tsf.2004.05.050

Thermal stability of strained Si/Si_1-xGe_x heterostructures for advanced microelectronics devices

L. H. Wong^*, C. C. Wong, K. K. Ong, J. P. Liu, L. Chan, R. Rao, K. L. Pey, L. Liu, Z. X. Shen

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The thermal stability of strained Si/Si_1-xGe_x epilayers with x=0.15 to 0.25 was investigated under various thermal annealing conditions. High Resolution (HR) X-ray Diffractometry (XRD) was used to determine the intrinsic strain of the heterostructure before any thermal treatment. The effect of thermal processing on strain relaxation and Ge diffusion was observed by Raman spectroscopy and Secondary Ion Mass Spectroscopy (SIMS). Strain analysis by Raman reveals no sign of Si strain relaxation for temperatures up to 1000 °C for 5 min. However, Ge diffusion into strained Si was detected by both Raman and SIMS.

Original language	English
Pages (from-to)	76-79
Number of pages	4
Journal	Thin Solid Films
Volume	462-463
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2004.05.050
Publication status	Published - Sept 2004
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Keywords

Raman
Silicon germanium
Strained silicon
Thermal stability

Access to Document

10.1016/j.tsf.2004.05.050

Cite this

@article{caac5efee118440c8f7a6a2419808b45,

title = "Thermal stability of strained Si/Si1-xGex heterostructures for advanced microelectronics devices",

abstract = "The thermal stability of strained Si/Si1-xGex epilayers with x=0.15 to 0.25 was investigated under various thermal annealing conditions. High Resolution (HR) X-ray Diffractometry (XRD) was used to determine the intrinsic strain of the heterostructure before any thermal treatment. The effect of thermal processing on strain relaxation and Ge diffusion was observed by Raman spectroscopy and Secondary Ion Mass Spectroscopy (SIMS). Strain analysis by Raman reveals no sign of Si strain relaxation for temperatures up to 1000 °C for 5 min. However, Ge diffusion into strained Si was detected by both Raman and SIMS.",

keywords = "Raman, Silicon germanium, Strained silicon, Thermal stability",

author = "Wong, {L. H.} and Wong, {C. C.} and Ong, {K. K.} and Liu, {J. P.} and L. Chan and R. Rao and Pey, {K. L.} and L. Liu and Shen, {Z. X.}",

year = "2004",

month = sep,

doi = "10.1016/j.tsf.2004.05.050",

language = "English",

volume = "462-463",

pages = "76--79",

journal = "Thin Solid Films",

issn = "0040-6090",

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T1 - Thermal stability of strained Si/Si1-xGex heterostructures for advanced microelectronics devices

AU - Wong, L. H.

AU - Wong, C. C.

AU - Ong, K. K.

AU - Liu, J. P.

AU - Chan, L.

AU - Rao, R.

AU - Pey, K. L.

AU - Liu, L.

AU - Shen, Z. X.

PY - 2004/9

Y1 - 2004/9

N2 - The thermal stability of strained Si/Si1-xGex epilayers with x=0.15 to 0.25 was investigated under various thermal annealing conditions. High Resolution (HR) X-ray Diffractometry (XRD) was used to determine the intrinsic strain of the heterostructure before any thermal treatment. The effect of thermal processing on strain relaxation and Ge diffusion was observed by Raman spectroscopy and Secondary Ion Mass Spectroscopy (SIMS). Strain analysis by Raman reveals no sign of Si strain relaxation for temperatures up to 1000 °C for 5 min. However, Ge diffusion into strained Si was detected by both Raman and SIMS.

AB - The thermal stability of strained Si/Si1-xGex epilayers with x=0.15 to 0.25 was investigated under various thermal annealing conditions. High Resolution (HR) X-ray Diffractometry (XRD) was used to determine the intrinsic strain of the heterostructure before any thermal treatment. The effect of thermal processing on strain relaxation and Ge diffusion was observed by Raman spectroscopy and Secondary Ion Mass Spectroscopy (SIMS). Strain analysis by Raman reveals no sign of Si strain relaxation for temperatures up to 1000 °C for 5 min. However, Ge diffusion into strained Si was detected by both Raman and SIMS.

KW - Raman

KW - Silicon germanium

KW - Strained silicon

KW - Thermal stability

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