Top down scale-up of semiconducting nanostructures for large area electronics

Cheng Sun; Arman Ahnood; Sungsik Lee; Nripan Mathews; Subodh Mhaisalkar; Arokia Nathan

doi:10.1109/JDT.2014.2312792

Top down scale-up of semiconducting nanostructures for large area electronics

Cheng Sun, Arman Ahnood, Sungsik Lee, Nripan Mathews, Subodh Mhaisalkar, Arokia Nathan

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this paper, we present a study on electrical and optical characteristics of n-type tin-oxide nanowires integrated based on top-down scale-up strategy. Through a combination of contact printing and plasma based back-channel passivation, we have achieved stable electrical characteristics with standard deviation in mobility and threshold voltage of 9.1% and 25%, respectively, for a large area of 1× 1 cm² area. Through use of contact printing, high alignment of nanowires was achieved thus minimizing the number of nanowire-nanowire junctions, which serve to limit carrier transport in the channel. In addition, persistent photoconductivity has been observed, which we attribute to oxygen vacancy ionization and subsequent elimination using a gate pulse driving scheme.

Original language	English
Article number	6776429
Pages (from-to)	660-665
Number of pages	6
Journal	IEEE/OSA Journal of Display Technology
Volume	10
Issue number	8
DOIs	https://doi.org/10.1109/JDT.2014.2312792
Publication status	Published - Aug 2014
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

Large area electronics
Nanowires
Plasma- enhanced chemical vapor deposition
Top-down integration
Uniformity

Access to Document

10.1109/JDT.2014.2312792

Cite this

@article{a4d73eccc4d54ba386371999376b8e8f,

title = "Top down scale-up of semiconducting nanostructures for large area electronics",

abstract = "In this paper, we present a study on electrical and optical characteristics of n-type tin-oxide nanowires integrated based on top-down scale-up strategy. Through a combination of contact printing and plasma based back-channel passivation, we have achieved stable electrical characteristics with standard deviation in mobility and threshold voltage of 9.1% and 25%, respectively, for a large area of 1× 1 cm2 area. Through use of contact printing, high alignment of nanowires was achieved thus minimizing the number of nanowire-nanowire junctions, which serve to limit carrier transport in the channel. In addition, persistent photoconductivity has been observed, which we attribute to oxygen vacancy ionization and subsequent elimination using a gate pulse driving scheme.",

keywords = "Large area electronics, Nanowires, Plasma- enhanced chemical vapor deposition, Top-down integration, Uniformity",

author = "Cheng Sun and Arman Ahnood and Sungsik Lee and Nripan Mathews and Subodh Mhaisalkar and Arokia Nathan",

year = "2014",

month = aug,

doi = "10.1109/JDT.2014.2312792",

language = "English",

volume = "10",

pages = "660--665",

journal = "IEEE/OSA Journal of Display Technology",

issn = "1551-319X",

publisher = "IEEE Computer Society",

number = "8",

}

TY - JOUR

T1 - Top down scale-up of semiconducting nanostructures for large area electronics

AU - Sun, Cheng

AU - Ahnood, Arman

AU - Lee, Sungsik

AU - Mathews, Nripan

AU - Mhaisalkar, Subodh

AU - Nathan, Arokia

PY - 2014/8

Y1 - 2014/8

N2 - In this paper, we present a study on electrical and optical characteristics of n-type tin-oxide nanowires integrated based on top-down scale-up strategy. Through a combination of contact printing and plasma based back-channel passivation, we have achieved stable electrical characteristics with standard deviation in mobility and threshold voltage of 9.1% and 25%, respectively, for a large area of 1× 1 cm2 area. Through use of contact printing, high alignment of nanowires was achieved thus minimizing the number of nanowire-nanowire junctions, which serve to limit carrier transport in the channel. In addition, persistent photoconductivity has been observed, which we attribute to oxygen vacancy ionization and subsequent elimination using a gate pulse driving scheme.

AB - In this paper, we present a study on electrical and optical characteristics of n-type tin-oxide nanowires integrated based on top-down scale-up strategy. Through a combination of contact printing and plasma based back-channel passivation, we have achieved stable electrical characteristics with standard deviation in mobility and threshold voltage of 9.1% and 25%, respectively, for a large area of 1× 1 cm2 area. Through use of contact printing, high alignment of nanowires was achieved thus minimizing the number of nanowire-nanowire junctions, which serve to limit carrier transport in the channel. In addition, persistent photoconductivity has been observed, which we attribute to oxygen vacancy ionization and subsequent elimination using a gate pulse driving scheme.

KW - Large area electronics

KW - Nanowires

KW - Plasma- enhanced chemical vapor deposition

KW - Top-down integration

KW - Uniformity

UR - http://www.scopus.com/inward/record.url?scp=84903720756&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84903720756&partnerID=8YFLogxK

U2 - 10.1109/JDT.2014.2312792

DO - 10.1109/JDT.2014.2312792

M3 - Article

AN - SCOPUS:84903720756

SN - 1551-319X

VL - 10

SP - 660

EP - 665

JO - IEEE/OSA Journal of Display Technology

JF - IEEE/OSA Journal of Display Technology

IS - 8

M1 - 6776429

ER -

Top down scale-up of semiconducting nanostructures for large area electronics

Abstract

ASJC Scopus Subject Areas

Keywords

Access to Document

Other files and links

Fingerprint

Cite this