Tuning electrical properties in amorphous zinc tin oxide thin films for solution processed electronics

R. Devi Chandra; Manohar Rao; Keke Zhang; Rajiv Ramanujam Prabhakar; Chen Shi; Jie Zhang; Subodh G. Mhaisalkar; Nripan Mathews

doi:10.1021/am401003k

Tuning electrical properties in amorphous zinc tin oxide thin films for solution processed electronics

R. Devi Chandra, Manohar Rao, Keke Zhang, Rajiv Ramanujam Prabhakar, Chen Shi, Jie Zhang, Subodh G. Mhaisalkar, Nripan Mathews^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

58 Citations (Scopus)

Abstract

Solution processed zinc tin oxide (ZTO) thin film transistors (TFTs) were fabricated by varying the Zn/Sn composition. The addition of Sn to the zinc oxide (ZnO) films resulted in improved electrical characteristics, with devices of Zn_0.7Sn_0.3O composition showing the highest mobility of 7.7 cm²/(V s). An improvement in subthreshold swings was also observed, indicative of a reduction of the interfacial trap densities. Mobility studies at low temperature have been carried out, which indicated that the activation energy was reduced with Sn incorporation. Kelvin probe force microscopy was performed on the films to evaluate work function and correlated to the metal-semiconductor barrier indicating Zn_0.7Sn_0.3O films had the smallest barrier for charge injection. Organic-inorganic hybrid complementary inverters with a maximum gain of 10 were fabricated by integrating ZTO TFTs with poly-3-hexylthiophene (P3HT) transistors.

Original language	English
Pages (from-to)	773-777
Number of pages	5
Journal	ACS Applied Materials and Interfaces
Volume	6
Issue number	2
DOIs	https://doi.org/10.1021/am401003k
Publication status	Published - Jan 22 2014
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science

Keywords

amorphous semiconductors
CMOS inverter
Kelvin probe
solution processing
thin film transistors
zinc tin oxide

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10.1021/am401003k

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title = "Tuning electrical properties in amorphous zinc tin oxide thin films for solution processed electronics",

abstract = "Solution processed zinc tin oxide (ZTO) thin film transistors (TFTs) were fabricated by varying the Zn/Sn composition. The addition of Sn to the zinc oxide (ZnO) films resulted in improved electrical characteristics, with devices of Zn0.7Sn0.3O composition showing the highest mobility of 7.7 cm2/(V s). An improvement in subthreshold swings was also observed, indicative of a reduction of the interfacial trap densities. Mobility studies at low temperature have been carried out, which indicated that the activation energy was reduced with Sn incorporation. Kelvin probe force microscopy was performed on the films to evaluate work function and correlated to the metal-semiconductor barrier indicating Zn0.7Sn0.3O films had the smallest barrier for charge injection. Organic-inorganic hybrid complementary inverters with a maximum gain of 10 were fabricated by integrating ZTO TFTs with poly-3-hexylthiophene (P3HT) transistors.",

keywords = "amorphous semiconductors, CMOS inverter, Kelvin probe, solution processing, thin film transistors, zinc tin oxide",

author = "Chandra, {R. Devi} and Manohar Rao and Keke Zhang and Prabhakar, {Rajiv Ramanujam} and Chen Shi and Jie Zhang and Mhaisalkar, {Subodh G.} and Nripan Mathews",

year = "2014",

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doi = "10.1021/am401003k",

language = "English",

volume = "6",

pages = "773--777",

journal = "ACS Applied Materials and Interfaces",

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T1 - Tuning electrical properties in amorphous zinc tin oxide thin films for solution processed electronics

AU - Chandra, R. Devi

AU - Rao, Manohar

AU - Zhang, Keke

AU - Prabhakar, Rajiv Ramanujam

AU - Shi, Chen

AU - Zhang, Jie

AU - Mhaisalkar, Subodh G.

AU - Mathews, Nripan

PY - 2014/1/22

Y1 - 2014/1/22

N2 - Solution processed zinc tin oxide (ZTO) thin film transistors (TFTs) were fabricated by varying the Zn/Sn composition. The addition of Sn to the zinc oxide (ZnO) films resulted in improved electrical characteristics, with devices of Zn0.7Sn0.3O composition showing the highest mobility of 7.7 cm2/(V s). An improvement in subthreshold swings was also observed, indicative of a reduction of the interfacial trap densities. Mobility studies at low temperature have been carried out, which indicated that the activation energy was reduced with Sn incorporation. Kelvin probe force microscopy was performed on the films to evaluate work function and correlated to the metal-semiconductor barrier indicating Zn0.7Sn0.3O films had the smallest barrier for charge injection. Organic-inorganic hybrid complementary inverters with a maximum gain of 10 were fabricated by integrating ZTO TFTs with poly-3-hexylthiophene (P3HT) transistors.

AB - Solution processed zinc tin oxide (ZTO) thin film transistors (TFTs) were fabricated by varying the Zn/Sn composition. The addition of Sn to the zinc oxide (ZnO) films resulted in improved electrical characteristics, with devices of Zn0.7Sn0.3O composition showing the highest mobility of 7.7 cm2/(V s). An improvement in subthreshold swings was also observed, indicative of a reduction of the interfacial trap densities. Mobility studies at low temperature have been carried out, which indicated that the activation energy was reduced with Sn incorporation. Kelvin probe force microscopy was performed on the films to evaluate work function and correlated to the metal-semiconductor barrier indicating Zn0.7Sn0.3O films had the smallest barrier for charge injection. Organic-inorganic hybrid complementary inverters with a maximum gain of 10 were fabricated by integrating ZTO TFTs with poly-3-hexylthiophene (P3HT) transistors.

KW - amorphous semiconductors

KW - CMOS inverter

KW - Kelvin probe

KW - solution processing

KW - thin film transistors

KW - zinc tin oxide

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ER -

Tuning electrical properties in amorphous zinc tin oxide thin films for solution processed electronics

Abstract

ASJC Scopus Subject Areas

Keywords

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