TY - GEN
T1 - Tunning electrical characteristics for networked carbon nanotube field-effect transistors using thiolated molecules
AU - Chun, Wei Lee
AU - Dong, Xiaochen
AU - Zhang, Keke
AU - Tangtang, H.
AU - Mhaisalkar, S. G.
AU - Li, Lain Jong
PY - 2008
Y1 - 2008
N2 - We examine the effects of adsorption of four thiolated molecules (HS-C 10H21, HS-C11H22OH, HS-C 10H20COOH, and HS-C2H4C 4F9) on the electrical characteristics of single-walled carbon nanotube network FETs (SNFETs). Measuring the work function of the electrodes before and after molecule adsorption and performing Schottky barrier energy extraction for SNFETs provide direct evidence that the device characteristics of SNFETs after SAM adsorption are altered primarily due to the change in energy-level alignment between the Au and SWNTs. We also demonstrate that the electrical characteristics of SNFETs can be modified by introducing thiolated heme on Au electrodes and by using the location-selective photo-irradiation method, which provides an effective methodology for the fine-tuning and performance optimization of these devices in a controllable way.
AB - We examine the effects of adsorption of four thiolated molecules (HS-C 10H21, HS-C11H22OH, HS-C 10H20COOH, and HS-C2H4C 4F9) on the electrical characteristics of single-walled carbon nanotube network FETs (SNFETs). Measuring the work function of the electrodes before and after molecule adsorption and performing Schottky barrier energy extraction for SNFETs provide direct evidence that the device characteristics of SNFETs after SAM adsorption are altered primarily due to the change in energy-level alignment between the Au and SWNTs. We also demonstrate that the electrical characteristics of SNFETs can be modified by introducing thiolated heme on Au electrodes and by using the location-selective photo-irradiation method, which provides an effective methodology for the fine-tuning and performance optimization of these devices in a controllable way.
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U2 - 10.1109/INEC.2008.4585545
DO - 10.1109/INEC.2008.4585545
M3 - Conference contribution
AN - SCOPUS:52649134482
SN - 9781424415731
T3 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
SP - 542
EP - 544
BT - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
T2 - 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Y2 - 24 March 2008 through 27 March 2008
ER -