Ultrafast Electron and Hole Relaxation Pathways in Few-Layer MoS2

Zhaogang Nie, Run Long, Jefri S. Teguh, Chung Che Huang, Daniel W. Hewak, Edwin K.L. Yeow, Zexiang Shen, Oleg V. Prezhdo*, Zhi Heng Loh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

57 Citations (Scopus)

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Chemistry

Physics