Ultrahigh-pressure induced decomposition of silicon disulfide into silicon-sulfur compounds with high coordination numbers

Yuanzheng Chen, Xiaolei Feng, Jiao Chen, Xinyong Cai, Bai Sun, Hongyan Wang, Huarong Du, Simon A.T. Redfern, Yu Xie, Hanyu Liu

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Silicon disulfide, SiS2, is thought to occur in interstellar dust and is of fundamental interest more generally among the silicon chalcogenides as a comparator to SiO2, an important component of terrestrial planets. However, the high-pressure behaviors of silicon sulfides are unclear. Here, using an efficient structure search method, we systematically explore the structural evolution of different Si-S stoichiometries up to 250 GPa. SiS2 is found to be stable below 155 GPa, above which it decomposes into two compounds, SiS and SiS3. SiS adopts a high-symmetry cubic structure consisting of eightfold-coordinated silicon in face-sharing SiS8 polyhedra, while SiS3 crystallizes in a rhombohedral structure containing ninefold-coordinated SiS9 polyhedra. Analyses suggest that the Si eightfold-coordination environment could be a common feature for group IV-VI compounds under high pressure. Our findings provide insights on the nature of Si-S compounds under ultrahigh pressure.

Original languageEnglish
Article number184106
JournalPhysical Review B
Volume99
Issue number18
DOIs
Publication statusPublished - May 15 2019
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2019 American Physical Society.

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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