Ultraviolet amplified spontaneous emission from zinc oxide ridge waveguides on silicon substrate

S. F. Yu; Clement Yuen; S. P. Lau; Y. G. Wang; H. W. Lee; B. K. Tay

doi:10.1063/1.1629784

Ultraviolet amplified spontaneous emission from zinc oxide ridge waveguides on silicon substrate

S. F. Yu^*, Clement Yuen, S. P. Lau, Y. G. Wang, H. W. Lee, B. K. Tay

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

Device-quality ZnO thin films were deposited on lattice-mismatched silicon substrate by the FCVA technique. High intensity UV ASE was observed from the devices at room temperature. A stable fundamental TE mode was maintained inside the ridge waveguide at high pump intensity, and the corresponding maximum net optical gain was found to be 120 cm^-1 at 1.9 MW/cm² pump intensity. This high pump intensity indicate that the ZnO thin films on silicon substrate can withstand catastrophic optical damage at very high pump (lasing) intensities, so that they are a durable active medium to realize lasers.

Original language	English
Pages (from-to)	4288-4290
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	21
DOIs	https://doi.org/10.1063/1.1629784
Publication status	Published - Nov 24 2003
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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@article{e11494f73a9f47d384ee1f75c9cecbc3,

title = "Ultraviolet amplified spontaneous emission from zinc oxide ridge waveguides on silicon substrate",

abstract = "Device-quality ZnO thin films were deposited on lattice-mismatched silicon substrate by the FCVA technique. High intensity UV ASE was observed from the devices at room temperature. A stable fundamental TE mode was maintained inside the ridge waveguide at high pump intensity, and the corresponding maximum net optical gain was found to be 120 cm-1 at 1.9 MW/cm2 pump intensity. This high pump intensity indicate that the ZnO thin films on silicon substrate can withstand catastrophic optical damage at very high pump (lasing) intensities, so that they are a durable active medium to realize lasers.",

author = "Yu, \{S. F.\} and Clement Yuen and Lau, \{S. P.\} and Wang, \{Y. G.\} and Lee, \{H. W.\} and Tay, \{B. K.\}",

year = "2003",

month = nov,

day = "24",

doi = "10.1063/1.1629784",

language = "English",

volume = "83",

pages = "4288--4290",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "21",

}

TY - JOUR

T1 - Ultraviolet amplified spontaneous emission from zinc oxide ridge waveguides on silicon substrate

AU - Yu, S. F.

AU - Yuen, Clement

AU - Lau, S. P.

AU - Wang, Y. G.

AU - Lee, H. W.

AU - Tay, B. K.

PY - 2003/11/24

Y1 - 2003/11/24

N2 - Device-quality ZnO thin films were deposited on lattice-mismatched silicon substrate by the FCVA technique. High intensity UV ASE was observed from the devices at room temperature. A stable fundamental TE mode was maintained inside the ridge waveguide at high pump intensity, and the corresponding maximum net optical gain was found to be 120 cm-1 at 1.9 MW/cm2 pump intensity. This high pump intensity indicate that the ZnO thin films on silicon substrate can withstand catastrophic optical damage at very high pump (lasing) intensities, so that they are a durable active medium to realize lasers.

AB - Device-quality ZnO thin films were deposited on lattice-mismatched silicon substrate by the FCVA technique. High intensity UV ASE was observed from the devices at room temperature. A stable fundamental TE mode was maintained inside the ridge waveguide at high pump intensity, and the corresponding maximum net optical gain was found to be 120 cm-1 at 1.9 MW/cm2 pump intensity. This high pump intensity indicate that the ZnO thin films on silicon substrate can withstand catastrophic optical damage at very high pump (lasing) intensities, so that they are a durable active medium to realize lasers.

UR - http://www.scopus.com/inward/record.url?scp=0348107235&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0348107235&partnerID=8YFLogxK

U2 - 10.1063/1.1629784

DO - 10.1063/1.1629784

M3 - Article

AN - SCOPUS:0348107235

SN - 0003-6951

VL - 83

SP - 4288

EP - 4290

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Ultraviolet amplified spontaneous emission from zinc oxide ridge waveguides on silicon substrate

Abstract

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