Uniform delayering of copper metallization

Y. W. Siah; Y. J. Hong; Q. Liu; H. B. Kor; C. L. Gan

doi:10.1109/IPFA.2013.6599147

Uniform delayering of copper metallization

Y. W. Siah, Y. J. Hong, Q. Liu, H. B. Kor, C. L. Gan

Nanyang Technological University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Citations (Scopus)

Abstract

Integrated circuit chips of newer technology usually have a larger die size and an increase number of metallization. Hence, pure usage of polishing to remove the layers would induce severe edge rounding. An alternative method is proposed to decrease the polishing time for copper metallization removal while reducing edge rounding on the sample during sample preparation that will preserve the integrity of the layers for further failure analysis.

Original language	English
Title of host publication	Proceedings of the 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013
Pages	166-169
Number of pages	4
DOIs	https://doi.org/10.1109/IPFA.2013.6599147
Publication status	Published - 2013
Externally published	Yes
Event	2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013 - Suzhou, China Duration: Jul 15 2013 → Jul 19 2013

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013
Country/Territory	China
City	Suzhou
Period	7/15/13 → 7/19/13

ASJC Scopus Subject Areas

Electrical and Electronic Engineering

Keywords

copper metallization
Delayering
polishing
sample preparation

Access to Document

10.1109/IPFA.2013.6599147

Cite this

Siah, Y. W., Hong, Y. J., Liu, Q., Kor, H. B., & Gan, C. L. (2013). Uniform delayering of copper metallization. In Proceedings of the 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013 (pp. 166-169). Article 6599147 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2013.6599147

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title = "Uniform delayering of copper metallization",

abstract = "Integrated circuit chips of newer technology usually have a larger die size and an increase number of metallization. Hence, pure usage of polishing to remove the layers would induce severe edge rounding. An alternative method is proposed to decrease the polishing time for copper metallization removal while reducing edge rounding on the sample during sample preparation that will preserve the integrity of the layers for further failure analysis.",

keywords = "copper metallization, Delayering, polishing, sample preparation",

author = "Siah, {Y. W.} and Hong, {Y. J.} and Q. Liu and Kor, {H. B.} and Gan, {C. L.}",

year = "2013",

doi = "10.1109/IPFA.2013.6599147",

language = "English",

isbn = "9781479912414",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

pages = "166--169",

booktitle = "Proceedings of the 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013",

note = "2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013 ; Conference date: 15-07-2013 Through 19-07-2013",

}

Siah, YW, Hong, YJ, Liu, Q, Kor, HB & Gan, CL 2013, Uniform delayering of copper metallization. in Proceedings of the 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013., 6599147, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, pp. 166-169, 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013, Suzhou, China, 7/15/13. https://doi.org/10.1109/IPFA.2013.6599147

Uniform delayering of copper metallization. / Siah, Y. W.; Hong, Y. J.; Liu, Q. et al.
Proceedings of the 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013. 2013. p. 166-169 6599147 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Uniform delayering of copper metallization

AU - Siah, Y. W.

AU - Hong, Y. J.

AU - Liu, Q.

AU - Kor, H. B.

AU - Gan, C. L.

PY - 2013

Y1 - 2013

N2 - Integrated circuit chips of newer technology usually have a larger die size and an increase number of metallization. Hence, pure usage of polishing to remove the layers would induce severe edge rounding. An alternative method is proposed to decrease the polishing time for copper metallization removal while reducing edge rounding on the sample during sample preparation that will preserve the integrity of the layers for further failure analysis.

AB - Integrated circuit chips of newer technology usually have a larger die size and an increase number of metallization. Hence, pure usage of polishing to remove the layers would induce severe edge rounding. An alternative method is proposed to decrease the polishing time for copper metallization removal while reducing edge rounding on the sample during sample preparation that will preserve the integrity of the layers for further failure analysis.

KW - copper metallization

KW - Delayering

KW - polishing

KW - sample preparation

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DO - 10.1109/IPFA.2013.6599147

M3 - Conference contribution

AN - SCOPUS:84885673786

SN - 9781479912414

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

SP - 166

EP - 169

BT - Proceedings of the 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013

T2 - 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013

Y2 - 15 July 2013 through 19 July 2013

ER -

Siah YW, Hong YJ, Liu Q, Kor HB, Gan CL. Uniform delayering of copper metallization. In Proceedings of the 2013 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2013. 2013. p. 166-169. 6599147. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2013.6599147

Uniform delayering of copper metallization

Abstract

Publication series

Conference

ASJC Scopus Subject Areas

Keywords

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