V-doped ZnO thin films prepared by RF magnetron sputtering

W. D. Shao; X. F. Chen; W. Ren; P. Shi; X. Q. Wu; O. K. Tan; W. G. Zhu; X. Yao

doi:10.1080/00150193.2010.484319

V-doped ZnO thin films prepared by RF magnetron sputtering

W. D. Shao, X. F. Chen, W. Ren, P. Shi, X. Q. Wu, O. K. Tan, W. G. Zhu, X. Yao

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

The V-doped ZnO thin films were prepared on Pt/TiO₂/SiO ₂/Si substrate by RF magnetron sputtering for piezoelectric device applications. X-ray diffraction study suggests that the sputtered ZnO thin films are grown in (0002)-preferred orientation, and the c lattice parameter decrease with V content increasing. The dielectric constant of the films is in the range of 9-16 at 1 kHz, and the dielectric loss blow 1%. The J-E characteristic of the films suggests that the field-assisted ionic conduction mechanism is predominant at the lower electric field and trap-controlled space-charge-limited conduction mechanism is predominant at the higher electric field.

Original language	English
Pages (from-to)	10-15
Number of pages	6
Journal	Ferroelectrics
Volume	406
Issue number	1
DOIs	https://doi.org/10.1080/00150193.2010.484319
Publication status	Published - 2010
Externally published	Yes
Event	12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18 - Xi'an, China Duration: Aug 23 2009 → Aug 27 2009

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Keywords

Piezoelectric
Sputtering
V-doped ZnO films

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10.1080/00150193.2010.484319

Cite this

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title = "V-doped ZnO thin films prepared by RF magnetron sputtering",

abstract = "The V-doped ZnO thin films were prepared on Pt/TiO2/SiO 2/Si substrate by RF magnetron sputtering for piezoelectric device applications. X-ray diffraction study suggests that the sputtered ZnO thin films are grown in (0002)-preferred orientation, and the c lattice parameter decrease with V content increasing. The dielectric constant of the films is in the range of 9-16 at 1 kHz, and the dielectric loss blow 1%. The J-E characteristic of the films suggests that the field-assisted ionic conduction mechanism is predominant at the lower electric field and trap-controlled space-charge-limited conduction mechanism is predominant at the higher electric field.",

keywords = "Piezoelectric, Sputtering, V-doped ZnO films",

author = "Shao, {W. D.} and Chen, {X. F.} and W. Ren and P. Shi and Wu, {X. Q.} and Tan, {O. K.} and Zhu, {W. G.} and X. Yao",

year = "2010",

doi = "10.1080/00150193.2010.484319",

language = "English",

volume = "406",

pages = "10--15",

journal = "Ferroelectrics",

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publisher = "Taylor and Francis Ltd.",

number = "1",

note = "12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18 ; Conference date: 23-08-2009 Through 27-08-2009",

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TY - JOUR

T1 - V-doped ZnO thin films prepared by RF magnetron sputtering

AU - Shao, W. D.

AU - Chen, X. F.

AU - Ren, W.

AU - Shi, P.

AU - Wu, X. Q.

AU - Tan, O. K.

AU - Zhu, W. G.

AU - Yao, X.

PY - 2010

Y1 - 2010

N2 - The V-doped ZnO thin films were prepared on Pt/TiO2/SiO 2/Si substrate by RF magnetron sputtering for piezoelectric device applications. X-ray diffraction study suggests that the sputtered ZnO thin films are grown in (0002)-preferred orientation, and the c lattice parameter decrease with V content increasing. The dielectric constant of the films is in the range of 9-16 at 1 kHz, and the dielectric loss blow 1%. The J-E characteristic of the films suggests that the field-assisted ionic conduction mechanism is predominant at the lower electric field and trap-controlled space-charge-limited conduction mechanism is predominant at the higher electric field.

AB - The V-doped ZnO thin films were prepared on Pt/TiO2/SiO 2/Si substrate by RF magnetron sputtering for piezoelectric device applications. X-ray diffraction study suggests that the sputtered ZnO thin films are grown in (0002)-preferred orientation, and the c lattice parameter decrease with V content increasing. The dielectric constant of the films is in the range of 9-16 at 1 kHz, and the dielectric loss blow 1%. The J-E characteristic of the films suggests that the field-assisted ionic conduction mechanism is predominant at the lower electric field and trap-controlled space-charge-limited conduction mechanism is predominant at the higher electric field.

KW - Piezoelectric

KW - Sputtering

KW - V-doped ZnO films

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DO - 10.1080/00150193.2010.484319

M3 - Conference article

AN - SCOPUS:79955698022

SN - 0015-0193

VL - 406

SP - 10

EP - 15

JO - Ferroelectrics

JF - Ferroelectrics

IS - 1

T2 - 12th International Meeting on Ferroelectricity, IMF-12 and the 18th IEEE International Symposium on Applications of Ferroelectrics, ISAF-18

Y2 - 23 August 2009 through 27 August 2009

ER -

V-doped ZnO thin films prepared by RF magnetron sputtering

Abstract

ASJC Scopus Subject Areas

Keywords

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