Visualizing charge transport in silicon nanocrystals embedded in SiO 2 films with electrostatic force microscopy

C. Y. Ng, T. P. Chen*, H. W. Lau, Y. Liu, M. S. Tse, O. K. Tan, V. S.W. Lim

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

45 Citations (Scopus)

Abstract

The charge transport in silicon nanocrystals (nc-Si) embedded in SiO 2 dielectric films was analyzed using electrostatic force microscopy (EFM). It was found that the charge diffusion from nc-Si was the dominant mechanism for the decay of trapped charge in the nc-Si. An increase in the charge cloud area due to the charge diffusion was also observed. The results show the blockage and acceleration of charge diffusion by the neighbouring charges with same and opposite charge signs.

Original languageEnglish
Pages (from-to)2941-2943
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number14
DOIs
Publication statusPublished - Oct 4 2004
Externally publishedYes

ASJC Scopus Subject Areas

  • Physics and Astronomy (miscellaneous)

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