Abstract
The charge transport in silicon nanocrystals (nc-Si) embedded in SiO 2 dielectric films was analyzed using electrostatic force microscopy (EFM). It was found that the charge diffusion from nc-Si was the dominant mechanism for the decay of trapped charge in the nc-Si. An increase in the charge cloud area due to the charge diffusion was also observed. The results show the blockage and acceleration of charge diffusion by the neighbouring charges with same and opposite charge signs.
Original language | English |
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Pages (from-to) | 2941-2943 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 85 |
Issue number | 14 |
DOIs | |
Publication status | Published - Oct 4 2004 |
Externally published | Yes |
ASJC Scopus Subject Areas
- Physics and Astronomy (miscellaneous)