Voiding in copper interconnects during electromigration

C. L. Gan; M. K. Lim

doi:10.1533/9780857093752.2.113

Voiding in copper interconnects during electromigration

C. L. Gan^*, M. K. Lim

^*Corresponding author for this work

Nanyang Technological University

Research output: Chapter in Book/Report/Conference proceeding › Chapter

3 Citations (Scopus)

Abstract

In this chapter, the void formation mechanism in copper interconnects is discussed. The void nucleation process is described, and the differences between aluminum and copper interconnects are highlighted. The void growth mechanism is presented, emphasizing the role that the copper/cap interface plays in electromigration. Immortality in copper interconnects is discussed in the context of no-void nucleation and void growth saturation.

Original language	English
Title of host publication	Electromigration in Thin Films and Electronic Devices
Subtitle of host publication	Materials and Reliability
Publisher	Elsevier Ltd
Pages	113-134
Number of pages	22
ISBN (Print)	9781845699376
DOIs	https://doi.org/10.1533/9780857093752.2.113
Publication status	Published - Aug 2011
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science

Keywords

Blech length
Copper/cap interface
Immortality
Void growth
Void nucleation

Access to Document

10.1533/9780857093752.2.113

Cite this

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title = "Voiding in copper interconnects during electromigration",

abstract = "In this chapter, the void formation mechanism in copper interconnects is discussed. The void nucleation process is described, and the differences between aluminum and copper interconnects are highlighted. The void growth mechanism is presented, emphasizing the role that the copper/cap interface plays in electromigration. Immortality in copper interconnects is discussed in the context of no-void nucleation and void growth saturation.",

keywords = "Blech length, Copper/cap interface, Immortality, Void growth, Void nucleation",

author = "Gan, \{C. L.\} and Lim, \{M. K.\}",

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AU - Gan, C. L.

AU - Lim, M. K.

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AB - In this chapter, the void formation mechanism in copper interconnects is discussed. The void nucleation process is described, and the differences between aluminum and copper interconnects are highlighted. The void growth mechanism is presented, emphasizing the role that the copper/cap interface plays in electromigration. Immortality in copper interconnects is discussed in the context of no-void nucleation and void growth saturation.

KW - Blech length

KW - Copper/cap interface

KW - Immortality

KW - Void growth

KW - Void nucleation

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PB - Elsevier Ltd

ER -

Voiding in copper interconnects during electromigration

Abstract

ASJC Scopus Subject Areas

Keywords

Access to Document

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