W band carbon nanotubes interconnects compatible with CMOS technology

Philippe Roux-Levy; Joseph M. De Saxce; Chun Fei Siah; Jianxiong Wang; Beng Kang Tay; Philippe Coquet; Dominique Baillargeat

doi:10.1109/IMS30576.2020.9223919

W band carbon nanotubes interconnects compatible with CMOS technology

Philippe Roux-Levy, Joseph M. De Saxce^*, Chun Fei Siah, Jianxiong Wang, Beng Kang Tay, Philippe Coquet, Dominique Baillargeat

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Whether it is for 5G applications, with the demand of data rate increase, for THz imaging, or other applications, there is an increasing need for millimeter-wave technologies. In particular, novel materials more reliable and more stable at high frequencies, are of strong interest. In this context, the use of carbon nanotube (CNT) based bumps to replace existing materials for interconnects, is not unheard of. However, in this article, demonstration of a successful experimental CNT flip chip device in the W band (75GHz-110GHz) is done. This new test structure is based on a dedicated CNT transfer process, which is compatible with CMOS technologies, due to process temperatures that are kept below 220°C.

Original language	English
Title of host publication	IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1047-1050
Number of pages	4
ISBN (Electronic)	9781728168159
DOIs	https://doi.org/10.1109/IMS30576.2020.9223919
Publication status	Published - Aug 2020
Externally published	Yes
Event	2020 IEEE/MTT-S International Microwave Symposium, IMS 2020 - Virtual, Los Angeles, United States Duration: Aug 4 2020 → Aug 6 2020

Publication series

Name	IEEE MTT-S International Microwave Symposium Digest
Volume	2020-August
ISSN (Print)	0149-645X

Conference

Conference	2020 IEEE/MTT-S International Microwave Symposium, IMS 2020
Country/Territory	United States
City	Virtual, Los Angeles
Period	8/4/20 → 8/6/20

Bibliographical note

Publisher Copyright:
© 2020 IEEE.

ASJC Scopus Subject Areas

Radiation
Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

Carbon nanotubes
Electronics packaging
Interconnects
RF nanotechnology

Access to Document

10.1109/IMS30576.2020.9223919

Cite this

Roux-Levy, P., De Saxce, J. M., Siah, C. F., Wang, J., Tay, B. K., Coquet, P., & Baillargeat, D. (2020). W band carbon nanotubes interconnects compatible with CMOS technology. In IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium (pp. 1047-1050). Article 9223919 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2020-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMS30576.2020.9223919

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title = "W band carbon nanotubes interconnects compatible with CMOS technology",

abstract = "Whether it is for 5G applications, with the demand of data rate increase, for THz imaging, or other applications, there is an increasing need for millimeter-wave technologies. In particular, novel materials more reliable and more stable at high frequencies, are of strong interest. In this context, the use of carbon nanotube (CNT) based bumps to replace existing materials for interconnects, is not unheard of. However, in this article, demonstration of a successful experimental CNT flip chip device in the W band (75GHz-110GHz) is done. This new test structure is based on a dedicated CNT transfer process, which is compatible with CMOS technologies, due to process temperatures that are kept below 220°C.",

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note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE/MTT-S International Microwave Symposium, IMS 2020 ; Conference date: 04-08-2020 Through 06-08-2020",

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Roux-Levy, P, De Saxce, JM, Siah, CF, Wang, J, Tay, BK, Coquet, P & Baillargeat, D 2020, W band carbon nanotubes interconnects compatible with CMOS technology. in IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium., 9223919, IEEE MTT-S International Microwave Symposium Digest, vol. 2020-August, Institute of Electrical and Electronics Engineers Inc., pp. 1047-1050, 2020 IEEE/MTT-S International Microwave Symposium, IMS 2020, Virtual, Los Angeles, United States, 8/4/20. https://doi.org/10.1109/IMS30576.2020.9223919

W band carbon nanotubes interconnects compatible with CMOS technology. / Roux-Levy, Philippe; De Saxce, Joseph M.; Siah, Chun Fei et al.
IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium. Institute of Electrical and Electronics Engineers Inc., 2020. p. 1047-1050 9223919 (IEEE MTT-S International Microwave Symposium Digest; Vol. 2020-August).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AU - Siah, Chun Fei

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AU - Coquet, Philippe

AU - Baillargeat, Dominique

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Roux-Levy P, De Saxce JM, Siah CF, Wang J, Tay BK, Coquet P et al. W band carbon nanotubes interconnects compatible with CMOS technology. In IMS 2020 - 2020 IEEE/MTT-S International Microwave Symposium. Institute of Electrical and Electronics Engineers Inc. 2020. p. 1047-1050. 9223919. (IEEE MTT-S International Microwave Symposium Digest). doi: 10.1109/IMS30576.2020.9223919

W band carbon nanotubes interconnects compatible with CMOS technology

Abstract

Publication series

Conference

Bibliographical note

ASJC Scopus Subject Areas

Keywords

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