Wafer-Level Fabrication and Gas Sensing Properties of miniaturized gas sensors based on Inductively Coupled Plasma Deposited Tin Oxide Nanorods

A. Forleo; L. Francioso; S. Capone; F. Casino; P. Siciliano; O. K. Tan; H. Hui

doi:10.1016/j.proche.2009.07.049

Wafer-Level Fabrication and Gas Sensing Properties of miniaturized gas sensors based on Inductively Coupled Plasma Deposited Tin Oxide Nanorods

A. Forleo^*, L. Francioso, S. Capone, F. Casino, P. Siciliano, O. K. Tan, H. Hui

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

SnO₂ nanorods were successfully deposited on 3" Si/SiO₂ wafers by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) and a wafer-level patterning of nanorods layer for miniaturized solid state gas sensor fabrication were performed. Uniform needle-shape SnO₂ nanorods in situ grown were obtained under catalyst- and high temperature treatment-free growth condition. These nanorods have an average diameter between 5 and 15 nm and a length of 160 to 300 nm. The SnO₂-nanords based gas sensors were tested towards NH₃ and CH₃OH and gas sensing tests show remarkable response, showing promising and repeatable results compared with the SnO₂ thin films gas sensors.

Original language	English
Pages (from-to)	196-199
Number of pages	4
Journal	Procedia Chemistry
Volume	1
Issue number	1
DOIs	https://doi.org/10.1016/j.proche.2009.07.049
Publication status	Published - Sept 2009
Externally published	Yes
Event	Eurosensors 23rd Conference - Lausanne, Switzerland Duration: Sept 6 2009 → Sept 9 2009

ASJC Scopus Subject Areas

General Chemistry
General Chemical Engineering

Keywords

Gas sensors
Nanorods
plasma-enhanced chemical vapor deposition (PECVD)
SnO

Access to Document

10.1016/j.proche.2009.07.049

Cite this

@article{9c61894136484492ae4eb42d9f9d0ff3,

title = "Wafer-Level Fabrication and Gas Sensing Properties of miniaturized gas sensors based on Inductively Coupled Plasma Deposited Tin Oxide Nanorods",

abstract = "SnO2 nanorods were successfully deposited on 3{"} Si/SiO2 wafers by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) and a wafer-level patterning of nanorods layer for miniaturized solid state gas sensor fabrication were performed. Uniform needle-shape SnO2 nanorods in situ grown were obtained under catalyst- and high temperature treatment-free growth condition. These nanorods have an average diameter between 5 and 15 nm and a length of 160 to 300 nm. The SnO2-nanords based gas sensors were tested towards NH3 and CH3OH and gas sensing tests show remarkable response, showing promising and repeatable results compared with the SnO2 thin films gas sensors.",

keywords = "Gas sensors, Nanorods, plasma-enhanced chemical vapor deposition (PECVD), SnO",

author = "A. Forleo and L. Francioso and S. Capone and F. Casino and P. Siciliano and Tan, {O. K.} and H. Hui",

year = "2009",

month = sep,

doi = "10.1016/j.proche.2009.07.049",

language = "English",

volume = "1",

pages = "196--199",

journal = "Procedia Chemistry",

issn = "1876-6196",

publisher = "Elsevier B.V.",

number = "1",

note = "Eurosensors 23rd Conference ; Conference date: 06-09-2009 Through 09-09-2009",

}

TY - JOUR

T1 - Wafer-Level Fabrication and Gas Sensing Properties of miniaturized gas sensors based on Inductively Coupled Plasma Deposited Tin Oxide Nanorods

AU - Forleo, A.

AU - Francioso, L.

AU - Capone, S.

AU - Casino, F.

AU - Siciliano, P.

AU - Tan, O. K.

AU - Hui, H.

PY - 2009/9

Y1 - 2009/9

N2 - SnO2 nanorods were successfully deposited on 3" Si/SiO2 wafers by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) and a wafer-level patterning of nanorods layer for miniaturized solid state gas sensor fabrication were performed. Uniform needle-shape SnO2 nanorods in situ grown were obtained under catalyst- and high temperature treatment-free growth condition. These nanorods have an average diameter between 5 and 15 nm and a length of 160 to 300 nm. The SnO2-nanords based gas sensors were tested towards NH3 and CH3OH and gas sensing tests show remarkable response, showing promising and repeatable results compared with the SnO2 thin films gas sensors.

AB - SnO2 nanorods were successfully deposited on 3" Si/SiO2 wafers by inductively coupled plasma-enhanced chemical vapor deposition (PECVD) and a wafer-level patterning of nanorods layer for miniaturized solid state gas sensor fabrication were performed. Uniform needle-shape SnO2 nanorods in situ grown were obtained under catalyst- and high temperature treatment-free growth condition. These nanorods have an average diameter between 5 and 15 nm and a length of 160 to 300 nm. The SnO2-nanords based gas sensors were tested towards NH3 and CH3OH and gas sensing tests show remarkable response, showing promising and repeatable results compared with the SnO2 thin films gas sensors.

KW - Gas sensors

KW - Nanorods

KW - plasma-enhanced chemical vapor deposition (PECVD)

KW - SnO

UR - http://www.scopus.com/inward/record.url?scp=71549155924&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71549155924&partnerID=8YFLogxK

U2 - 10.1016/j.proche.2009.07.049

DO - 10.1016/j.proche.2009.07.049

M3 - Conference article

AN - SCOPUS:71549155924

SN - 1876-6196

VL - 1

SP - 196

EP - 199

JO - Procedia Chemistry

JF - Procedia Chemistry

IS - 1

T2 - Eurosensors 23rd Conference

Y2 - 6 September 2009 through 9 September 2009

ER -

Wafer-Level Fabrication and Gas Sensing Properties of miniaturized gas sensors based on Inductively Coupled Plasma Deposited Tin Oxide Nanorods

Abstract

ASJC Scopus Subject Areas

Keywords

Access to Document

Other files and links

Fingerprint

Cite this