Well-aligned SiC nanoneedle arrays for excellent field emitters

Renbing Wu; Kun Zhou; Xukun Qian; Jun Wei; Yun Tao; Chorng Haur Sow; Liuying Wang; Yizhong Huang

doi:10.1016/j.matlet.2012.09.096

Well-aligned SiC nanoneedle arrays for excellent field emitters

Renbing Wu, Kun Zhou^*, Xukun Qian, Jun Wei, Yun Tao, Chorng Haur Sow, Liuying Wang, Yizhong Huang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

47 Citations (Scopus)

Abstract

Well-aligned SiC nanowire arrays are successfully synthesized on carbon cloth by a facile chemical vapor deposition without using any templates. Such nanowire arrays acting as cold electron emitters exhibit excellent field emission performance with very low turn-on and threshold voltages of 1.3 V μm^-1 and 2.2 V μm^-1, respectively, and high field enhancement factor (∼3667). The superior field emission properties are mainly attributed to well aligned and tapered morphology of SiC and the enhanced electrons transport in the nanowires due to the good electric contact with the carbon fabric substrate where they grow.

Original language	English
Pages (from-to)	220-223
Number of pages	4
Journal	Materials Letters
Volume	91
DOIs	https://doi.org/10.1016/j.matlet.2012.09.096
Publication status	Published - Jan 15 2013
Externally published	Yes

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Keywords

Arrays
Field emitters
Nanoneedle
SiC

Access to Document

10.1016/j.matlet.2012.09.096

Cite this

@article{d21e4be9c76b4b309ade2d2577b4122e,

title = "Well-aligned SiC nanoneedle arrays for excellent field emitters",

abstract = "Well-aligned SiC nanowire arrays are successfully synthesized on carbon cloth by a facile chemical vapor deposition without using any templates. Such nanowire arrays acting as cold electron emitters exhibit excellent field emission performance with very low turn-on and threshold voltages of 1.3 V μm-1 and 2.2 V μm-1, respectively, and high field enhancement factor (∼3667). The superior field emission properties are mainly attributed to well aligned and tapered morphology of SiC and the enhanced electrons transport in the nanowires due to the good electric contact with the carbon fabric substrate where they grow.",

keywords = "Arrays, Field emitters, Nanoneedle, SiC",

author = "Renbing Wu and Kun Zhou and Xukun Qian and Jun Wei and Yun Tao and Sow, {Chorng Haur} and Liuying Wang and Yizhong Huang",

year = "2013",

month = jan,

day = "15",

doi = "10.1016/j.matlet.2012.09.096",

language = "English",

volume = "91",

pages = "220--223",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

}

TY - JOUR

T1 - Well-aligned SiC nanoneedle arrays for excellent field emitters

AU - Wu, Renbing

AU - Zhou, Kun

AU - Qian, Xukun

AU - Wei, Jun

AU - Tao, Yun

AU - Sow, Chorng Haur

AU - Wang, Liuying

AU - Huang, Yizhong

PY - 2013/1/15

Y1 - 2013/1/15

N2 - Well-aligned SiC nanowire arrays are successfully synthesized on carbon cloth by a facile chemical vapor deposition without using any templates. Such nanowire arrays acting as cold electron emitters exhibit excellent field emission performance with very low turn-on and threshold voltages of 1.3 V μm-1 and 2.2 V μm-1, respectively, and high field enhancement factor (∼3667). The superior field emission properties are mainly attributed to well aligned and tapered morphology of SiC and the enhanced electrons transport in the nanowires due to the good electric contact with the carbon fabric substrate where they grow.

AB - Well-aligned SiC nanowire arrays are successfully synthesized on carbon cloth by a facile chemical vapor deposition without using any templates. Such nanowire arrays acting as cold electron emitters exhibit excellent field emission performance with very low turn-on and threshold voltages of 1.3 V μm-1 and 2.2 V μm-1, respectively, and high field enhancement factor (∼3667). The superior field emission properties are mainly attributed to well aligned and tapered morphology of SiC and the enhanced electrons transport in the nanowires due to the good electric contact with the carbon fabric substrate where they grow.

KW - Arrays

KW - Field emitters

KW - Nanoneedle

KW - SiC

UR - http://www.scopus.com/inward/record.url?scp=84870161275&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870161275&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2012.09.096

DO - 10.1016/j.matlet.2012.09.096

M3 - Article

AN - SCOPUS:84870161275

SN - 0167-577X

VL - 91

SP - 220

EP - 223

JO - Materials Letters

JF - Materials Letters

ER -

Well-aligned SiC nanoneedle arrays for excellent field emitters

Abstract

ASJC Scopus Subject Areas

Keywords

Access to Document

Other files and links

Fingerprint

Cite this