Wide-bandgap Zn2 GeO4 nanowire networks as efficient ultraviolet photodetectors with fast response and recovery time

Chaoyi Yan; Nandan Singh; Pooi See Lee

doi:10.1063/1.3297905

Wide-bandgap Zn₂ GeO₄ nanowire networks as efficient ultraviolet photodetectors with fast response and recovery time

Chaoyi Yan, Nandan Singh, Pooi See Lee

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

179 Citations (Scopus)

Abstract

Ultraviolet (UV) photodetectors based on ternary Zn₂ GeO ₄ nanowire (NW) networks are demonstrated. The devices show fast response and recovery time, which is attributed to the unique NW-NW junction barrier dominated conductance for network devices. The UV-light induced barrier height modulation is much faster than the oxygen adsorption/desorption processes. The wide-band gap Zn₂ GeO₄ NWs also exhibit high wavelength selectivity for deep UV detection. We demonstrate that ternary oxide NW-networks are ideal building blocks for nanoscale photodetectors with superior performance and facile fabrication processes.

Original language	English
Article number	053108
Journal	Applied Physics Letters
Volume	96
Issue number	5
DOIs	https://doi.org/10.1063/1.3297905
Publication status	Published - 2010
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3297905

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title = "Wide-bandgap Zn2 GeO4 nanowire networks as efficient ultraviolet photodetectors with fast response and recovery time",

abstract = "Ultraviolet (UV) photodetectors based on ternary Zn2 GeO 4 nanowire (NW) networks are demonstrated. The devices show fast response and recovery time, which is attributed to the unique NW-NW junction barrier dominated conductance for network devices. The UV-light induced barrier height modulation is much faster than the oxygen adsorption/desorption processes. The wide-band gap Zn2 GeO4 NWs also exhibit high wavelength selectivity for deep UV detection. We demonstrate that ternary oxide NW-networks are ideal building blocks for nanoscale photodetectors with superior performance and facile fabrication processes.",

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N2 - Ultraviolet (UV) photodetectors based on ternary Zn2 GeO 4 nanowire (NW) networks are demonstrated. The devices show fast response and recovery time, which is attributed to the unique NW-NW junction barrier dominated conductance for network devices. The UV-light induced barrier height modulation is much faster than the oxygen adsorption/desorption processes. The wide-band gap Zn2 GeO4 NWs also exhibit high wavelength selectivity for deep UV detection. We demonstrate that ternary oxide NW-networks are ideal building blocks for nanoscale photodetectors with superior performance and facile fabrication processes.

AB - Ultraviolet (UV) photodetectors based on ternary Zn2 GeO 4 nanowire (NW) networks are demonstrated. The devices show fast response and recovery time, which is attributed to the unique NW-NW junction barrier dominated conductance for network devices. The UV-light induced barrier height modulation is much faster than the oxygen adsorption/desorption processes. The wide-band gap Zn2 GeO4 NWs also exhibit high wavelength selectivity for deep UV detection. We demonstrate that ternary oxide NW-networks are ideal building blocks for nanoscale photodetectors with superior performance and facile fabrication processes.

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Wide-bandgap Zn₂ GeO₄ nanowire networks as efficient ultraviolet photodetectors with fast response and recovery time

Abstract

ASJC Scopus Subject Areas

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