XPS and SIMS studies of CVD-grown cubic SiC films on Si(100)

A. T.S. Wee; Z. C. Feng; H. H. Hng; K. L. Tan; C. C. Tin; R. Hu; R. Coston

doi:10.1557/proc-339-411

XPS and SIMS studies of CVD-grown cubic SiC films on Si(100)

A. T.S. Wee^*, Z. C. Feng, H. H. Hng, K. L. Tan, C. C. Tin, R. Hu, R. Coston

^*Corresponding author for this work

National University of Singapore

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

A series of CVD-grown 3C-SiC/Si(100) films of different growth times, and hence film thicknesses, are studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS showed that the surfaces of the samples consist of Si oxides (SiO₂ and SiO_x where x < 2) and unreacted CH. Unreacted elemental Si is also present and its amount decreases with increasing growth time. This surface overlayer is further investigated by changing the photoelectron take-off angle and from chemical etching studies. Compositional variations of the SiC films are also studied using SIMS.

Original language	English
Pages (from-to)	411-416
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	339
DOIs	https://doi.org/10.1557/proc-339-411
Publication status	Published - 1994
Externally published	Yes
Event	Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 8 1994

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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@article{60a922c5cae54ff58ef0e111784d803f,

title = "XPS and SIMS studies of CVD-grown cubic SiC films on Si(100)",

abstract = "A series of CVD-grown 3C-SiC/Si(100) films of different growth times, and hence film thicknesses, are studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS showed that the surfaces of the samples consist of Si oxides (SiO2 and SiOx where x < 2) and unreacted CH. Unreacted elemental Si is also present and its amount decreases with increasing growth time. This surface overlayer is further investigated by changing the photoelectron take-off angle and from chemical etching studies. Compositional variations of the SiC films are also studied using SIMS.",

author = "Wee, \{A. T.S.\} and Feng, \{Z. C.\} and Hng, \{H. H.\} and Tan, \{K. L.\} and Tin, \{C. C.\} and R. Hu and R. Coston",

year = "1994",

doi = "10.1557/proc-339-411",

language = "English",

volume = "339",

pages = "411--416",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1994 MRS Spring Meeting ; Conference date: 04-04-1994 Through 08-04-1994",

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TY - JOUR

T1 - XPS and SIMS studies of CVD-grown cubic SiC films on Si(100)

AU - Wee, A. T.S.

AU - Feng, Z. C.

AU - Hng, H. H.

AU - Tan, K. L.

AU - Tin, C. C.

AU - Hu, R.

AU - Coston, R.

PY - 1994

Y1 - 1994

N2 - A series of CVD-grown 3C-SiC/Si(100) films of different growth times, and hence film thicknesses, are studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS showed that the surfaces of the samples consist of Si oxides (SiO2 and SiOx where x < 2) and unreacted CH. Unreacted elemental Si is also present and its amount decreases with increasing growth time. This surface overlayer is further investigated by changing the photoelectron take-off angle and from chemical etching studies. Compositional variations of the SiC films are also studied using SIMS.

AB - A series of CVD-grown 3C-SiC/Si(100) films of different growth times, and hence film thicknesses, are studied by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). XPS showed that the surfaces of the samples consist of Si oxides (SiO2 and SiOx where x < 2) and unreacted CH. Unreacted elemental Si is also present and its amount decreases with increasing growth time. This surface overlayer is further investigated by changing the photoelectron take-off angle and from chemical etching studies. Compositional variations of the SiC films are also studied using SIMS.

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U2 - 10.1557/proc-339-411

DO - 10.1557/proc-339-411

M3 - Conference article

AN - SCOPUS:0028730731

SN - 0272-9172

VL - 339

SP - 411

EP - 416

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Spring Meeting

Y2 - 4 April 1994 through 8 April 1994

ER -

XPS and SIMS studies of CVD-grown cubic SiC films on Si(100)

Abstract

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