Zinc oxide quantum dots embedded films by metal organic chemical vapor deposition

S. T. Tan; X. W. Sun; X. H. Zhang; B. J. Chen; S. J. Chua; Anna Yong; Z. L. Dong; X. Hu

doi:10.1016/j.jcrysgro.2006.02.035

Zinc oxide quantum dots embedded films by metal organic chemical vapor deposition

S. T. Tan, X. W. Sun^*, X. H. Zhang, B. J. Chen, S. J. Chua, Anna Yong, Z. L. Dong, X. Hu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

41 Citations (Scopus)

Abstract

Zinc oxide (ZnO) quantum dots (QDs) were fabricated on silicon substrates by metal organic chemical vapor deposition. Formation of QDs is due to the vigorous reaction of the precursors when a large amount of precursors was introduced during the growth. The size of the QDs ranged from 3 to 12 nm, which was estimated by high-resolution transmission electron microscopy. The photoluminescence measured at 80 K showed that the emission of QDs embedded film ranged from 3.0 to 3.6 eV. The broad near-band-edge emission was due to the quantum confinement effect of the QDs.

Original language	English
Pages (from-to)	518-522
Number of pages	5
Journal	Journal of Crystal Growth
Volume	290
Issue number	2
DOIs	https://doi.org/10.1016/j.jcrysgro.2006.02.035
Publication status	Published - May 1 2006
Externally published	Yes

ASJC Scopus Subject Areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Keywords

A2. MOCVD
A3. Quantum dots
B1. Nanocrystals
B1. ZnO

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10.1016/j.jcrysgro.2006.02.035

Cite this

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title = "Zinc oxide quantum dots embedded films by metal organic chemical vapor deposition",

abstract = "Zinc oxide (ZnO) quantum dots (QDs) were fabricated on silicon substrates by metal organic chemical vapor deposition. Formation of QDs is due to the vigorous reaction of the precursors when a large amount of precursors was introduced during the growth. The size of the QDs ranged from 3 to 12 nm, which was estimated by high-resolution transmission electron microscopy. The photoluminescence measured at 80 K showed that the emission of QDs embedded film ranged from 3.0 to 3.6 eV. The broad near-band-edge emission was due to the quantum confinement effect of the QDs.",

keywords = "A2. MOCVD, A3. Quantum dots, B1. Nanocrystals, B1. ZnO",

author = "Tan, \{S. T.\} and Sun, \{X. W.\} and Zhang, \{X. H.\} and Chen, \{B. J.\} and Chua, \{S. J.\} and Anna Yong and Dong, \{Z. L.\} and X. Hu",

year = "2006",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2006.02.035",

language = "English",

volume = "290",

pages = "518--522",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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number = "2",

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TY - JOUR

T1 - Zinc oxide quantum dots embedded films by metal organic chemical vapor deposition

AU - Tan, S. T.

AU - Sun, X. W.

AU - Zhang, X. H.

AU - Chen, B. J.

AU - Chua, S. J.

AU - Yong, Anna

AU - Dong, Z. L.

AU - Hu, X.

PY - 2006/5/1

Y1 - 2006/5/1

N2 - Zinc oxide (ZnO) quantum dots (QDs) were fabricated on silicon substrates by metal organic chemical vapor deposition. Formation of QDs is due to the vigorous reaction of the precursors when a large amount of precursors was introduced during the growth. The size of the QDs ranged from 3 to 12 nm, which was estimated by high-resolution transmission electron microscopy. The photoluminescence measured at 80 K showed that the emission of QDs embedded film ranged from 3.0 to 3.6 eV. The broad near-band-edge emission was due to the quantum confinement effect of the QDs.

AB - Zinc oxide (ZnO) quantum dots (QDs) were fabricated on silicon substrates by metal organic chemical vapor deposition. Formation of QDs is due to the vigorous reaction of the precursors when a large amount of precursors was introduced during the growth. The size of the QDs ranged from 3 to 12 nm, which was estimated by high-resolution transmission electron microscopy. The photoluminescence measured at 80 K showed that the emission of QDs embedded film ranged from 3.0 to 3.6 eV. The broad near-band-edge emission was due to the quantum confinement effect of the QDs.

KW - A2. MOCVD

KW - A3. Quantum dots

KW - B1. Nanocrystals

KW - B1. ZnO

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DO - 10.1016/j.jcrysgro.2006.02.035

M3 - Article

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SN - 0022-0248

VL - 290

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EP - 522

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 2

ER -

Zinc oxide quantum dots embedded films by metal organic chemical vapor deposition

Abstract

ASJC Scopus Subject Areas

Keywords

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