Zinc Tin Oxide (ZTO) electron transporting buffer layer in inverted organic solar cell

Than Zaw Oo; R. Devi Chandra; Natalia Yantara; Rajiv Ramanujam Prabhakar; Lydia H. Wong; Nripan Mathews; Subodh G. Mhaisalkar

doi:10.1016/j.orgel.2012.01.011

Zinc Tin Oxide (ZTO) electron transporting buffer layer in inverted organic solar cell

Than Zaw Oo, R. Devi Chandra, Natalia Yantara, Rajiv Ramanujam Prabhakar, Lydia H. Wong, Nripan Mathews^*, Subodh G. Mhaisalkar

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

64 Citations (Scopus)

Abstract

Solution processed, high electron mobility and highly transparent Zinc Tin Oxide (ZTO) was successfully exploited as electron transporting buffer layer in an inverted organic solar cell. The device configuration of FTO/ZTO/P3HT:PCBM/ WO₃/Ag was employed. For comparison, an identical device using a sol-gel derived TiO_x electron extracting layer was also fabricated. Increased short-circuit density (J_sc) and open-circuit voltage (V_oc) were generated in the devices with ZTO layer in comparison to the ones with TiO_x layer. It is attributed to a better electron transporting, hole blocking capacities and reduced recombination probabilities at electron collecting electrode with ZTO layer. A power conversion efficiency of 3.05% was achieved with ZTO devices.

Original language	English
Pages (from-to)	870-874
Number of pages	5
Journal	Organic Electronics
Volume	13
Issue number	5
DOIs	https://doi.org/10.1016/j.orgel.2012.01.011
Publication status	Published - May 2012
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Keywords

Electron transporting layer
High electron mobility
Inverted organic solar cell
Power conversion efficiency
Zinc Tin Oxide

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10.1016/j.orgel.2012.01.011

Cite this

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title = "Zinc Tin Oxide (ZTO) electron transporting buffer layer in inverted organic solar cell",

abstract = "Solution processed, high electron mobility and highly transparent Zinc Tin Oxide (ZTO) was successfully exploited as electron transporting buffer layer in an inverted organic solar cell. The device configuration of FTO/ZTO/P3HT:PCBM/ WO3/Ag was employed. For comparison, an identical device using a sol-gel derived TiOx electron extracting layer was also fabricated. Increased short-circuit density (Jsc) and open-circuit voltage (Voc) were generated in the devices with ZTO layer in comparison to the ones with TiOx layer. It is attributed to a better electron transporting, hole blocking capacities and reduced recombination probabilities at electron collecting electrode with ZTO layer. A power conversion efficiency of 3.05% was achieved with ZTO devices.",

keywords = "Electron transporting layer, High electron mobility, Inverted organic solar cell, Power conversion efficiency, Zinc Tin Oxide",

author = "Oo, {Than Zaw} and {Devi Chandra}, R. and Natalia Yantara and Prabhakar, {Rajiv Ramanujam} and Wong, {Lydia H.} and Nripan Mathews and Mhaisalkar, {Subodh G.}",

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T1 - Zinc Tin Oxide (ZTO) electron transporting buffer layer in inverted organic solar cell

AU - Oo, Than Zaw

AU - Devi Chandra, R.

AU - Yantara, Natalia

AU - Prabhakar, Rajiv Ramanujam

AU - Wong, Lydia H.

AU - Mathews, Nripan

AU - Mhaisalkar, Subodh G.

PY - 2012/5

Y1 - 2012/5

N2 - Solution processed, high electron mobility and highly transparent Zinc Tin Oxide (ZTO) was successfully exploited as electron transporting buffer layer in an inverted organic solar cell. The device configuration of FTO/ZTO/P3HT:PCBM/ WO3/Ag was employed. For comparison, an identical device using a sol-gel derived TiOx electron extracting layer was also fabricated. Increased short-circuit density (Jsc) and open-circuit voltage (Voc) were generated in the devices with ZTO layer in comparison to the ones with TiOx layer. It is attributed to a better electron transporting, hole blocking capacities and reduced recombination probabilities at electron collecting electrode with ZTO layer. A power conversion efficiency of 3.05% was achieved with ZTO devices.

AB - Solution processed, high electron mobility and highly transparent Zinc Tin Oxide (ZTO) was successfully exploited as electron transporting buffer layer in an inverted organic solar cell. The device configuration of FTO/ZTO/P3HT:PCBM/ WO3/Ag was employed. For comparison, an identical device using a sol-gel derived TiOx electron extracting layer was also fabricated. Increased short-circuit density (Jsc) and open-circuit voltage (Voc) were generated in the devices with ZTO layer in comparison to the ones with TiOx layer. It is attributed to a better electron transporting, hole blocking capacities and reduced recombination probabilities at electron collecting electrode with ZTO layer. A power conversion efficiency of 3.05% was achieved with ZTO devices.

KW - Electron transporting layer

KW - High electron mobility

KW - Inverted organic solar cell

KW - Power conversion efficiency

KW - Zinc Tin Oxide

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Zinc Tin Oxide (ZTO) electron transporting buffer layer in inverted organic solar cell

Abstract

ASJC Scopus Subject Areas

Keywords

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