Zn-doped SnO2 nanocrystals as efficient DSSC photoanode material and remarkable photocurrent enhancement by interface modification

Xincun Dou; Rajiv Ramanujam Prabhakar; Nripan Mathews; Yeng Ming Lam; Subodh Mhaisalkar

doi:10.1149/2.032209jes

Zn-doped SnO₂ nanocrystals as efficient DSSC photoanode material and remarkable photocurrent enhancement by interface modification

Xincun Dou^*, Rajiv Ramanujam Prabhakar, Nripan Mathews, Yeng Ming Lam, Subodh Mhaisalkar

^*Corresponding author for this work

Nanyang Technological University

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Zn-doped SnO₂ nanocrystals with different doping concentrations were synthesized and the nanocrystal photoanode based DSSC achieved a PCE of 2.07% with a high V_oc (0.67 V). TiCl₄ modification of the photoanode greatly improves the charge injection efficiency and charge collection efficiency and the resulting PCE increased to 4.32% despite a decreased dye adsorption. The Zn-doped SnO₂ nanocrystals will be of particular interest as photoanode material in DSSCs.

Original language	English
Pages (from-to)	H735-H739
Journal	Journal of the Electrochemical Society
Volume	159
Issue number	9
DOIs	https://doi.org/10.1149/2.032209jes
Publication status	Published - 2012
Externally published	Yes

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/2.032209jes

Cite this

@article{98765e0696d046209eefec68722f647b,

title = "Zn-doped SnO2 nanocrystals as efficient DSSC photoanode material and remarkable photocurrent enhancement by interface modification",

abstract = "Zn-doped SnO2 nanocrystals with different doping concentrations were synthesized and the nanocrystal photoanode based DSSC achieved a PCE of 2.07% with a high Voc (0.67 V). TiCl4 modification of the photoanode greatly improves the charge injection efficiency and charge collection efficiency and the resulting PCE increased to 4.32% despite a decreased dye adsorption. The Zn-doped SnO2 nanocrystals will be of particular interest as photoanode material in DSSCs.",

author = "Xincun Dou and Prabhakar, {Rajiv Ramanujam} and Nripan Mathews and Lam, {Yeng Ming} and Subodh Mhaisalkar",

year = "2012",

doi = "10.1149/2.032209jes",

language = "English",

volume = "159",

pages = "H735--H739",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "9",

}

TY - JOUR

T1 - Zn-doped SnO2 nanocrystals as efficient DSSC photoanode material and remarkable photocurrent enhancement by interface modification

AU - Dou, Xincun

AU - Prabhakar, Rajiv Ramanujam

AU - Mathews, Nripan

AU - Lam, Yeng Ming

AU - Mhaisalkar, Subodh

PY - 2012

Y1 - 2012

N2 - Zn-doped SnO2 nanocrystals with different doping concentrations were synthesized and the nanocrystal photoanode based DSSC achieved a PCE of 2.07% with a high Voc (0.67 V). TiCl4 modification of the photoanode greatly improves the charge injection efficiency and charge collection efficiency and the resulting PCE increased to 4.32% despite a decreased dye adsorption. The Zn-doped SnO2 nanocrystals will be of particular interest as photoanode material in DSSCs.

AB - Zn-doped SnO2 nanocrystals with different doping concentrations were synthesized and the nanocrystal photoanode based DSSC achieved a PCE of 2.07% with a high Voc (0.67 V). TiCl4 modification of the photoanode greatly improves the charge injection efficiency and charge collection efficiency and the resulting PCE increased to 4.32% despite a decreased dye adsorption. The Zn-doped SnO2 nanocrystals will be of particular interest as photoanode material in DSSCs.

UR - http://www.scopus.com/inward/record.url?scp=84875482308&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84875482308&partnerID=8YFLogxK

U2 - 10.1149/2.032209jes

DO - 10.1149/2.032209jes

M3 - Article

AN - SCOPUS:84875482308

SN - 0013-4651

VL - 159

SP - H735-H739

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 9

ER -