ZnO nanoresistors by vapor phase transport method

Y. Yang; X. W. Sun; B. K. Tay; C. X. Xu

doi:10.1109/NANOEL.2006.1609711

ZnO nanoresistors by vapor phase transport method

Y. Yang^*, X. W. Sun, B. K. Tay, C. X. Xu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Zinc oxide (ZnO) nanoresistors have been successfully synthesized using a vapor phase transport method. Scanning electron microscopy showed that the nanoresistors were composed of shuttle-like nanorods and fine nanowires. X-ray Diffraction, transmission electron microscopy and selected-area electron diffraction revealed the single and twin-crystalline wurtzite nanostructures of ZnO along ±[0001] directions. A growth mechanism was proposed considering the spontaneous polarization along the c-axis of ZnO.

Original language	English
Title of host publication	NanoSingapore 2006
Subtitle of host publication	IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
Pages	197-200
Number of pages	4
DOIs	https://doi.org/10.1109/NANOEL.2006.1609711
Publication status	Published - 2006
Externally published	Yes
Event	2006 IEEE Conference on Emerging Technologies - Nanoelectronics - Singapore, Singapore Duration: Jan 10 2006 → Jan 13 2006

Publication series

Name	NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings
Volume	2006

Conference

Conference	2006 IEEE Conference on Emerging Technologies - Nanoelectronics
Country/Territory	Singapore
City	Singapore
Period	1/10/06 → 1/13/06

ASJC Scopus Subject Areas

General Engineering

Access to Document

10.1109/NANOEL.2006.1609711

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Yang, Y., Sun, X. W., Tay, B. K., & Xu, C. X. (2006). ZnO nanoresistors by vapor phase transport method. In NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings (pp. 197-200). Article 1609711 (NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings; Vol. 2006). https://doi.org/10.1109/NANOEL.2006.1609711

@inproceedings{49a84076205b43829effe0f71a014d5d,

title = "ZnO nanoresistors by vapor phase transport method",

abstract = "Zinc oxide (ZnO) nanoresistors have been successfully synthesized using a vapor phase transport method. Scanning electron microscopy showed that the nanoresistors were composed of shuttle-like nanorods and fine nanowires. X-ray Diffraction, transmission electron microscopy and selected-area electron diffraction revealed the single and twin-crystalline wurtzite nanostructures of ZnO along ±[0001] directions. A growth mechanism was proposed considering the spontaneous polarization along the c-axis of ZnO.",

author = "Y. Yang and Sun, {X. W.} and Tay, {B. K.} and Xu, {C. X.}",

year = "2006",

doi = "10.1109/NANOEL.2006.1609711",

language = "English",

isbn = "0780393589",

series = "NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings",

pages = "197--200",

booktitle = "NanoSingapore 2006",

note = "2006 IEEE Conference on Emerging Technologies - Nanoelectronics ; Conference date: 10-01-2006 Through 13-01-2006",

}

Yang, Y, Sun, XW, Tay, BK & Xu, CX 2006, ZnO nanoresistors by vapor phase transport method. in NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings., 1609711, NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings, vol. 2006, pp. 197-200, 2006 IEEE Conference on Emerging Technologies - Nanoelectronics, Singapore, Singapore, 1/10/06. https://doi.org/10.1109/NANOEL.2006.1609711

ZnO nanoresistors by vapor phase transport method. / Yang, Y.; Sun, X. W.; Tay, B. K. et al.
NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings. 2006. p. 197-200 1609711 (NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - ZnO nanoresistors by vapor phase transport method

AU - Yang, Y.

AU - Sun, X. W.

AU - Tay, B. K.

AU - Xu, C. X.

PY - 2006

Y1 - 2006

N2 - Zinc oxide (ZnO) nanoresistors have been successfully synthesized using a vapor phase transport method. Scanning electron microscopy showed that the nanoresistors were composed of shuttle-like nanorods and fine nanowires. X-ray Diffraction, transmission electron microscopy and selected-area electron diffraction revealed the single and twin-crystalline wurtzite nanostructures of ZnO along ±[0001] directions. A growth mechanism was proposed considering the spontaneous polarization along the c-axis of ZnO.

AB - Zinc oxide (ZnO) nanoresistors have been successfully synthesized using a vapor phase transport method. Scanning electron microscopy showed that the nanoresistors were composed of shuttle-like nanorods and fine nanowires. X-ray Diffraction, transmission electron microscopy and selected-area electron diffraction revealed the single and twin-crystalline wurtzite nanostructures of ZnO along ±[0001] directions. A growth mechanism was proposed considering the spontaneous polarization along the c-axis of ZnO.

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U2 - 10.1109/NANOEL.2006.1609711

DO - 10.1109/NANOEL.2006.1609711

M3 - Conference contribution

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SN - 0780393589

SN - 9780780393585

T3 - NanoSingapore 2006: IEEE Conference on Emerging Technologies - Nanoelectronics - Proceedings

SP - 197

EP - 200

BT - NanoSingapore 2006

T2 - 2006 IEEE Conference on Emerging Technologies - Nanoelectronics

Y2 - 10 January 2006 through 13 January 2006

ER -

ZnO nanoresistors by vapor phase transport method

Abstract

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