Improved pentacene device characteristics with sol-gel SiO₂ dielectric films

Keyphrases

• Capping Layer 33%
• Device Characteristics 100%
• Dielectric Film 100%
• Field-effect Transistors 66%
• Film Surface 33%
• Gate Dielectric 33%
• Grain Size 33%
• Hole Mobility 33%
• Interfacial Interaction 33%
• On-off Ratio 33%
• Pentacene 100%
• Root Mean Square 33%
• Semiconductors 33%
• Silica Gel 100%
• Subthreshold Swing 33%

Engineering

• Capping Layer 33%
• Dielectric Films 100%
• Field-Effect Transistor 66%
• Film Surface 33%
• Gate Dielectric 33%
• Interfacial Interaction 33%
• Pentacene 100%
• Root Mean Square 33%
• Silicon Dioxide 100%

Material Science

• Dielectric Films 100%
• Dielectric Material 33%
• Field Effect Transistor 66%
• Film 33%
• Grain Size 33%
• Hole Mobility 33%
• Sol-Gel 100%