Pulsed Laser Annealing Technology for Nano-Scale Fabrication of Silicon-Based Devices in Semiconductors

Keyphrases

• Activation Annealing 33%
• Annealing 33%
• Annealing Technology 100%
• Composition Characteristics 33%
• Defect Annealing 33%
• Dopant Activation 33%
• Dopant Diffusion 33%
• Fast Mixing 33%
• Fast Quenching 33%
• Fast-melting 33%
• Interface Characteristics 33%
• Laser Fluence 33%
• Laser-assisted Forming 33%
• Melting Depth 33%
• Nanoscale Engineering 100%
• P-type Doping 33%
• Pulse number 33%
• Pulsed Laser Annealing 100%
• Recent Advances 33%
• Recrystallization 33%
• Semiconductors 100%
• Silicide 33%
• Silicide Layer 33%
• Silicon-based 100%

Engineering

• Dopant Activation 33%
• Dopants 33%
• Laser Fluence 33%
• Melt Depth 33%
• Melting Point 33%
• Nanoscale 100%
• Pulsed Laser 100%
• Structural Composition 33%
• Transients 33%

Material Science

• Annealing 100%
• Doping (Additives) 50%
• Phase Composition 25%
• Silicide 50%
• Silicon 100%